TLP330_07 TOSHIBA [Toshiba Semiconductor], TLP330_07 Datasheet

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TLP330_07

Manufacturer Part Number
TLP330_07
Description
GaAs Ired & Photo−Transistor
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
Programmable Controllers
AC / DC−Input Module
Telecommunication
The TOSHIBA TLP330 consists of a photo−transistor optically coupled
to two gallium arsenide infrared emitting diode connected inverse
parallel in a six lead plastic DIP package.This is suitable for application
of AC input current up to 150mA.
Pin Configurations
1
2
3
If maximum rating: ±150mA
Collector−Emitter voltage: 55V(min.)
Current transfer ratio: 25% (min.)(I
Isolation voltage: 5000Vrms (min.)
UL recognized: UL1577, file no. E67349
6
5
4
1: Anode, cathode
2: Cathode, anode
3: NC
4: Emitter
5: Collector
6: Base
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
(top view)
F =
±20mA)
TLP330
1
Weight: 0.39 g
TOSHIBA
11−7A8
2007-10-01
TLP330
Unit in mm

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TLP330_07 Summary of contents

Page 1

TOSHIBA Photocoupler GaAs Ired & Photo−Transistor Programmable Controllers AC / DC−Input Module Telecommunication The TOSHIBA TLP330 consists of a photo−transistor optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel in a six lead plastic DIP package.This is ...

Page 2

Absolute Maximum Ratings Characteristic Forward current Forward current derating (Ta ≥ 25°C) Peak forward current (100μs pulse,100pps) Junction temperature Collector−emitter voltage Collector−base voltage Emitter−collector voltage Emitter−base voltage Collector current Power dissipation Power dissipation derating (Ta ≥ 25°C) Junction temperature Storage ...

Page 3

Individual Electrical Characteristics Characteristic Forward voltage Forward current Capacitance Collector−emitter breakdown voltage Emitter−collector breakdown voltage Collector−base breakdown voltage Emitter−base breakdown voltage Collector dark current Collector dark current Collector dark current DC forward current gain Capacitance (collector to emitter) Coupled Electrical ...

Page 4

Isolation Characteristics Characteristic Capacitance (input to output) Isolation resistance Isolation voltage Switching Characteristics Characteristic Rise time Fall time Turn−on time Turn−off time Turn−on time Storage time Turn−off time Turn−on time Storage time Turn−off time Fig. 1 Switching time test circuit ...

Page 5

I – 200 160 120 - Ambient temperature Ta (°C) I – 5000 Pulse width ≦ 100μs 3000 Ta = 25°C 1000 500 300 100 50 30 ...

Page 6

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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