TLP701_07 TOSHIBA [Toshiba Semiconductor], TLP701_07 Datasheet - Page 4

• Manufacturer Part Number: TLP701_07
• Description: IGBT/Power MOS FET gate drive
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Switching Characteristics
Propagation delay time
Output rise time (10−90 %)
Output fall time (90−10 %)
Switching time dispersion
between ON and OFF
Common mode transient immunity
at HIGH level output
Common mode transient immunity
at LOW level output
( * ): All typical values are at Ta = 25 °C.
I
I
I
F
F
F
Characteristics
Test Circuit 1: I
Test Circuit 3: V
Test Circuit 5: I
1
3
3
1
1
3
L → H
H → L
OPH
CCH
OH
4
4
4
| t p
6
6
6
(Ta = −40 to 100 °C, unless otherwise specified)
Symbol
0.1μF
0.1μF
0.1μF
HL
CM
CM
t p
t p
V
I
CCH
A
t r
V
t f
LH
HL
-t p
OH
H
A
L
V 6-5
LH
I
OPH
I
|
O
Circuit
Test
V
V
V
7
8
CC
CC
CC
V
R
C
V
V
Ta = 25 °C
CC
CM
CC
g
g
= 47 Ω
= 3 nF
4
= 30 V
= 30 V
=1000 Vp-p
Test Condition
V
F
Test Circuit 2: I
Test Circuit 4: V
Test Circuit 6: I
I
I
I
V
I
V
I
I
I
1
3
F
F
F
F
1
3
1
3
F
F
F
O (min)
O (max)
= 5 → 0 mA
= 0 , 5 mA
= 5 mA
= 0 mA
= 0 → 5 mA
= 5 → 0 mA
= 0 → 5 mA
= 26 V
= 1 V
−10000
10000
−500
Min
100
100
⎯
⎯
OPL
CCL
OL
4
4
4
6
6
6
0.1μF
0.1μF
0.1μF
V
V
Typ.*
A
I
OL
CCL
50
50
⎯
⎯
⎯
⎯
⎯
A
I
OPL
V 5-4
I
O
2007-10-01
Max
700
700
500
⎯
⎯
⎯
⎯
V
V
V
TLP701
CC
CC
CC
V/μs
Unit
ns