PH2729-110M_07 MACOM [Tyco Electronics], PH2729-110M_07 Datasheet
PH2729-110M_07
Manufacturer Part Number
PH2729-110M_07
Description
Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100?s Pulse, 10% Duty
Manufacturer
MACOM [Tyco Electronics]
Datasheet
1.PH2729-110M_07.pdf
(3 pages)
1
Features
• NPN silicon microwave power transistors
• Common base configuration
• Broadband Class C operation
• High efficiency inter-digitized geometry
• Diffused emitter ballasting resistors
• Gold metallization system
• Internal input and output impedance matching
• Hermetic metal/ceramic package
• RoHS compliant
Electrical Specifications: T
Absolute Maximum Ratings at 25°C
Radar Pulsed Power Transistor
110W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty
Collector-Emitter Breakdown Voltage I
Collector-Emitter Leakage Current
Thermal Resistance
Output Power
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
Load Mismatch Stability
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Power Dissipation @ +25°C
Storage Temperature
Junction Temperature
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
development. Performance is based on target specifications, simulated results, and/or prototype
measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
Parameter
Parameter
Symbol
V
V
P
T
T
EBO
I
STG
CES
TOT
C
J
V
Vcc = 36V, Pin = 23W
Vcc = 36V, Pin = 23W
Vcc = 36V, Pin = 23W
Vcc = 36V, Pin = 23W
Vcc = 36V, Pin = 23W
Vcc = 36V, Pin = 23W
Vcc = 36V, Pin = 23W
C
CE
= 50mA
Test Conditions
C
= 36V
= 25 ± 5°C (
-65 to +200
Rating
330
3.0
8.0
200
63
Room Ambient
Units
°C
°C
W
V
V
A
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
F = 2.7, 2.8, 2.9 GHz
Frequency
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or
information contained herein without notice.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 82.94.844.8296 / Fax: 82.94.844.8298
Outline Drawing
Visit www.macom.com for additional data sheets and product information.
)
Symbol
VSWR-S
VSWR-T
R
BV
P
I
TH(JC)
G
η
RL
CES
OUT
CES
C
P
M/A-COM Products
Released, 29 Jun 07
Min
110
6.8
63
35
-
-
-
-
-
Max
1.5:1
7.5
0.3
2:1
-6
-
-
-
-
Units
°C/W
mA
dB
dB
W
%
V
-
-
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PH2729-110M_07 Summary of contents
Page 1
Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty Features • NPN silicon microwave power transistors • Common base configuration • Broadband Class C operation • High efficiency inter-digitized geometry • Diffused emitter ballasting resistors • Gold metallization ...
Page 2
Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty Typical RF Performance Freq. Pin Pout (GHz) (W) (W) 2.7 23 162 2.8 23 146 2.9 23 133 Gain vs. Frequency 9.0 8.5 8.0 7.5 7.0 2.70 2.75 2.80 ...
Page 3
Radar Pulsed Power Transistor 110W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty Test Fixture Circuit Dimensions Test Fixture Assembly 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, ...