RM100CA-XXF MITSUBISHI [Mitsubishi Electric Semiconductor], RM100CA-XXF Datasheet - Page 2

• Manufacturer Part Number: RM100CA-XXF
• Description: HIGH SPEED SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

ABSOLUTE MAXIMUM RATINGS
* Order made
ELECTRICAL CHARACTERISTICS
*
V
V
V
I
I
I
T
T
V
I
V
t
Q
R
R
1
DC
FSM
2 t
RRM
rr
j
stg
RRM
DRM
R (DC)
iso
FM
th (j-c)
th (c-f)
rr
Symbol
Symbol
Symbol
12 class: V
—
—
R
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Reverse DC voltage
DC output current
Surge (non-repetitive) forward current
I
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Repetitive reverse current
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
2 t
=300V
for fusing
20, 24 class: V
Parameter
Parameter
Parameter
R
=600V
Resistive load, T
One half cycle at 60Hz, peak value
Value for one cycle of surge current
Charged part to case
Main terminal screw M4
Mounting screw M5
Typical value
T
T
I
Junction to case
Case to fin, conductive grease applied
(T
FM
j
j
=150 C, V
=25 C, I
j
=25 C)
=100A, di/dt=–200A/ s, V
600
720
480
12
FM
RRM
=100A, instantaneous meas.
C
applied
=75 C
Test conditions
Conditions
R
=300/600V*
16*
800
960
640
MITSUBISHI FAST RECOVERY DIODE MODULES
Voltage class
1
, Tj=150 C
1000
1100
20*
800
RM100CA/C1A-XXF
HIGH SPEED SWITCHING USE
Min.
—
—
—
—
—
—
16.7
0.98~1.47
1.47~1.96
–40~150
–40~125
Ratings
10~15
15~20
Limits
2000
2500
Typ.
100
90
—
—
—
—
—
—
1200
1350
960
24
10
3
INSULATED TYPE
Max.
1.5
0.8
0.5
0.3
20
60
kg·cm
kg·cm
Feb.1999
Unit
Unit
N·m
N·m
Unit
A
mA
C/ W
C/ W
V
V
V
A
A
V
g
V
2
C
C
C
s
s