PVD10 IRF [International Rectifier], PVD10 Datasheet

PVD10

Manufacturer Part Number

PVD10

Description

Microelectronic Power IC BOSFET Photovoltaic Relay Single-Pole, 160mA, 0-100V DC

Manufacturer

IRF [International Rectifier]

Datasheet

1.PVD10.pdf (6 pages)

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General Description

The Photovoltaic DC Relay (PVD) is a single-pole,

normally open solid state replacement for electro-

mechanical relays used for general purpose switch-

ing of analog signals. It utilizes as an output switch a

unique bidirectional (AC or DC) MOSFET power IC

termed a BOSFET. The BOSFET is controlled by a

photovoltaic generator of novel construction, which

is energized by radiation from a dielectrically iso-

lated light emitting diode (LED).

The PVD overcomes the limitations of both conven-

tional and reed electromechanical relays by offering

the solid state advantages of long life, high operat-

ing speed, low pick-up power, bounce-free opera-

tion, low thermal voltages and miniaturization. These

advantages allow product improvement and design

innovations in many applications such as process

control, multiplexing, telecommunications, automatic

test equipment and data acquisition.

The PVD can switch analog signals from thermo-

couple level to 100 volts peak DC. Signal frequen-

cies into the RF range are easily controlled and

switching rates up to 18kHz are achievable. The

extremely small thermally generated offset voltages

allow increased measurement accuracies.

Unique silicon technology developed by International

Rectifier forms the heart of the PVD. The monolithic

BOSFET contains a bidirectional N-channel power

MOSFET output structure. In addition, this power IC

chip has input circuitry for fast turn-off and gate

protection functions. This section of the BOSFET chip

utilizes both bipolar and MOS technology to form

NPN transistors, P-channel MOSFETs, resistors,

diodes and capacitors.

The photovoltaic generator similarly utilizes a unique

International Rectifier alloyed multijunction structure.

The excellent current conversion efficiency of this

technique results in the very fast response of the

PVD microelectronic power IC relay.

This advanced semiconductor technology has cre-

ated a radically new control device. Designers can

now develop switching systems to new standards of

electrical performance and mechanical compactness.

Part Identification

Part Number

PVD1052

PVD1054

Single-Pole, 160mA, 0-100V DC

Voltage (DC)

0 – 100V

Operating

3 milliwatts Pick-Up Power

Microelectronic Power IC

Data Sheet No. PD10023E

25µsec Operating Time

BOSFET Power IC

8-pin DIP Package

Series PVD10

1000V/µsec dv/dt

Sensitivity

UL recognized

-40°C to 85°C

5 mA

Bounce-Free

Operations

Features

Resistance

Off-State

Ohms

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PVD10 Summary of contents

Page 1

... PVD microelectronic power IC relay. This advanced semiconductor technology has cre- ated a radically new control device. Designers can now develop switching systems to new standards of electrical performance and mechanical compactness. Data Sheet No. PD10023E Series PVD10 Microelectronic Power IC Single-Pole, 160mA, 0-100V DC BOSFET Power Operations 25µ ...

Page 2

... Min. Off-state Resistance 25° VDC (see figure 5) Max. Thermal Offset Voltage @ 5.0mA Control Min. Off-State dv/dt Output Capacitance GENERAL CHARACTERISTICS (PVD1052 and PVD1054) Dielectric Strength: Input-Output Insulation Resistance: Input-Output @ 90V Maximum Capacitance: Input-Output Max. Pin Soldering Temperature (1.6mm below seating plane, 10 seconds max.) ...

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PVD10 IRF [International Rectifier], PVD10 Datasheet

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PVD10 Summary of contents

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