GM71C17400C Hynix Semiconductor, GM71C17400C Datasheet - Page 3

• Manufacturer Part Number: GM71C17400C
• Description: 4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
• Manufacturer: Hynix Semiconductor

Rev 0.1 / Apr’01
DC Electrical Characteristics (V
Note: 1. I
Symbol
V
V
I
I
I
I
I
I
I
I
I
I
L(O)
CC5
CC6
CC7
CC8
CC1
CC2
CC3
CC4
L(I)
OH
OL
2. Address can be changed once or less while RAS = V
3. Address can be changed once or less while CAS = V
4. L-version.
I
CC
CC
(max) is specified at the output open condition.
depends on output load condition when the device is selected.
Output Level
Output "H" Level Voltage (I
Output Level
Output "L" Level Voltage (I
Operating Current
Average Power Supply Operating Current
(RAS, CAS Cycling
Standby Current (TTL)
Power Supply Standby Current
(RAS, CAS = V
RAS Only Refresh Current
Average Power Supply Current
RAS Only Refresh Mode
(t
Standby Current (CMOS)
Power Supply Standby Current
(RAS, CAS >= V
CAS-before-RAS Refresh Current
(t
Battery Backup Operating Current(Standby with CBR Refresh)
(CBR refresh, t
D
Standby Current RAS = V
Input Leakage Current
Any Input (0V
Output Leakage Current
(D
Fast Page Mode Current
Average Power Supply Current
Fast Page Mode
(t
RC
RC
PC
OUT
OUT
= t
= t
= t
=
High-Z, CMOS interface)
is Disabled, 0V
RC
RC
PC
min)
min)
min)
<=
RC
IH
=62.5us
V
,
CC
CAS = V
D
D
IN
OUT
- 0.2V, D
<=
OUT
:
<=
t
RC
=
6V)
=
V
Parameter
=
,
Enable
OUT
High-Z)
t
t
RAS
IH
IL
RC
OUT
OUT
<= 6
<=
OUT
min)
=
= -5mA
0.3
V)
CC
4.2
= High-Z)
us,
mA)
= 5.0V+/-10%, Vss = 0V, T
)
IL
IH
.
.
50ns
60ns
70ns
50ns
60ns
70ns
50ns
60ns
70ns
50ns
60ns
70ns
GM71C(S)17400C/CL
Min
-10
-10
2.4
0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
A
= 0 ~ 70C)
Max
100
100
150
100
350
V
0.4
90
80
90
80
90
80
70
90
80
10
10
2
1
5
CC
Unit
mA
mA
mA
mA
mA
mA
mA
uA
uA
uA
uA
V
V
Note
1, 2
1, 3
2
4
4
1