HM1-6617/883 INTERSIL [Intersil Corporation], HM1-6617/883 Datasheet

HM1-6617/883

Manufacturer Part Number

HM1-6617/883

Description

2K x 8 CMOS PROM

Manufacturer

INTERSIL [Intersil Corporation]

Datasheet

1.HM1-6617883.pdf (7 pages)

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Bonase Electronics (HK) Co., Limited

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HM1-6617/883

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INTERSIL

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June 2004

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143

Features

• This Circuit is Processed in Accordance to MIL-STD-

• Low Power Standby and Operating Power

• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . . . . . 120ns

• Industry Standard Pinout

• Single 5.0V Supply

• CMOS/TTL Compatible Inputs

• High Output Drive . . . . . . . . . . . . . . . . 12 LSTTL Loads

• Synchronous Operation

• On-Chip Address Latches

• Separate Output Enable

• Operating Temperature Range . . . . . . -55

Ordering Information

Pinout

SBDIP

883 and is Fully Conformant Under the Provisions of

Paragraph 1.2.1.

- ICCSB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100µA

- ICCOP . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA at 1MHz

PACKAGE

GND

HM-6617/883 (SBDIP)

Intersil Corporation 2001

TOP VIEW

TEMPERATURE RANGE

-55

C to +125

A10

HM-6617/883

Description

The HM-6617/883 is a 16,384-bit fuse link CMOS PROM in

a 2K word by 8-bit/word format with “Three-State” outputs.

The HM-6617/883 utilizes a synchronous design technique.

This includes on-chip address latches and a separate output

enable control which makes this device ideal for applications

utilizing recent generation microprocessors. This design

technique, combined with the Intersil advanced self-aligned

silicon gate CMOS process technology offers ultra-low

standby current. Low ICCSB is ideal for battery applications

or other systems with low power requirements.

The Intersil NiCr fuse link technology is utilized on this and

other Intersil CMOS PROMs. This gives the user a PROM

with permanent, stable storage characteristics over the full

industrial and military temperature voltage ranges. NiCr fuse

technology combined with the low power characteristics of

CMOS provides an excellent alternative to standard bipolar

PROMs or NMOS EPROMs.

All bits are manufactured storing a logical “0” and can be

HM1-6617/883

120ns

NOTE: P should be hardwired to V

A0-A10

P (Note)

except during programming.

2K x 8 CMOS PROM

PIN DESCRIPTION

No Connect

Address Inputs

Chip Enable

Data Output

Power (+5V)

Output Enable

Program Enable

D24.6

DESCRIPTION

PACKAGE NO.

FN3016.3

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HM1-6617/883 Summary of contents

Page 1

... CMOS provides an excellent alternative to standard bipolar PROMs or NMOS EPROMs All bits are manufactured storing a logical “0” and can +125 C TEMPERATURE RANGE +125 C HM1-6617/883 TOP VIEW ...

Page 2

Functional Diagram MSB A A10 A9 LATCHED 7 A8 ADDRESS A7 REGISTER LSB ALL LINES POSITIVE LOGIC: ACTIVE HIGH THREE-STATE BUFFERS: A HIGH OUTPUT ACTIVE ADDRESS LATCHES AND GATED DECODERS: LATCH ON ...

Page 3

Absolute Maximum Ratings Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

TABLE 2. HM-6617/883 AC ELECTRICAL PERFORMANCE SPECIFICATIONS (Continued) Device Guaranteed and 100% Tested PARAMETER SYMBOL Read Cycle Time TELEL VCC = 4.5V and 5.5V NOTES: 1. All voltages referenced to Device GND measurements assume transition time ≤ 5ns; ...

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HM1-6617/883 datasheet download

HM1-6617/883 INTERSIL [Intersil Corporation], HM1-6617/883 Datasheet

HM1-6617/883

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HM1-6617/883 Summary of contents

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