DMN2400UV-13 DIODES [Diodes Incorporated], DMN2400UV-13 Datasheet - Page 3

• Manufacturer Part Number: DMN2400UV-13
• Description: DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: DIODES [Diodes Incorporated]

DMN2400UV
Document number: DS31852 Rev. 6 - 2
2.0
1.5
1.0
0.5
2.0
1.6
1.2
0.8
0.4
1.6
1.4
1.2
1.0
0.8
0.6
0
0
-50
0
0
Fig. 5 On-Resistance Variation with Temperature
-25
I , DRAIN-SOURCE CURRENT (A)
T , JUNCTION TEMPERATURE (°C)
vs. Drain Current and Gate Voltage
D
V , DRAIN-SOURCE VOLTAGE (V)
0.4
Fig. 1 Typical Output Characteristics
J
V
1
DS
GS
Fig. 3 Typical On-Resistance
V
0
GS
= 2.5V
V
V
GS
V
= 4.5V
GS
GS
= 2.0V
= 5.0V
= 1.5V
25
0.8
2
V
50
GS
= 1.8V
1.2
3
V
75
V
I = 1.0A
GS
D
GS
= 4.5V
= 4.5V
100
V
I = 500mA
V
V
V
V
1.6
D
GS
GS
GS
GS
4
GS
= 2.5.V
= 1.8V
= 1.5V
= 1.2V
= 2.5V
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2
5
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0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
1.5
1.0
0.5
0
0
0
-50
0
0
Fig. 6 On-Resistance Variation with Temperature
I = 500mA
V
D
Fig. 4 Typical Drain-Source On-Resistance
GS
V
-25
I = 1.0A
V
GS
D
= 2.5V
DS
V
Fig. 2 Typical Transfer Characteristics
T , JUNCTION TEMPERATURE (°C)
0.5
V
GS
vs. Drain Current and Temperature
= 4.5V
J
T = 85°C
= 5V
GS
A
= 4.5V
T = 125°C
0.4
A
, GATE SOURCE VOLTAGE (V)
0
T = 150°C
I , DRAIN CURRENT (A)
D
A
1
25
T = -55°C
0.8
A
1.5
50
T = 25°C
A
75
2
T = 150°C
T = -55°C
T = 85°C
T = 25°C
T = 125°C
A
A
A
A
A
1.2
100
DMN2400UV
2.5
© Diodes Incorporated
125 150
January 2011
1.6
3