DMN2005K_0711 DIODES [Diodes Incorporated], DMN2005K_0711 Datasheet - Page 2

• Manufacturer Part Number: DMN2005K_0711
• Description: N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
• Manufacturer: DIODES [Diodes Incorporated]

DMN2005K
Document number: DS30734 Rev. 5 - 2
1.8
1.6
1.2
0.4
0.2
1.4
0.8
0.6
2
1
0
0
T = 25 C
A
Fig. 5 Static Drain-Source On-Resistance
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
o
T , AMBIENT TEMPERATURE (°C)
DS
A
Fig. 3 Gate Threshold Voltage
V
1
GS
vs. Ambient Temperature
I , DRAIN CURRENT (A)
D
= 2.0V
vs. Drain Current
V
GS
V
=1.8V
GS
= 1.6V
2
V
GS
= 1.4V
V
V
GS
I = 1mA
D
DS
Pulsed
= 1.2V
V
= 10V
GS
3
= 1.0V
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Fig. 2
5
4
3
2
1
0
0
Fig. 4 Static Drain-Source On-State Resistance
T = 25 C
Pulsed
Reverse Drain Current vs. Source-Drain Voltage
A
V
GS
1
°
, GATE-SOURCE VOLTAGE (V)
I DRAIN CURRENT (A)
D ,
I = 200mA
D
2
vs. Drain Current
3
4
V
Pulsed
GS
DMN2005K
= 2.7 V
5
© Diodes Incorporated
November 2007
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