DMN2005DLP4K_09 DIODES [Diodes Incorporated], DMN2005DLP4K_09 Datasheet - Page 2

• Manufacturer Part Number: DMN2005DLP4K_09
• Description: DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
• Manufacturer: DIODES [Diodes Incorporated]

DMN2005DLP4K
Document number: DS30801 Rev. 8 - 2
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
0.6
0.2
0.8
0.4
0.8
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
Fig. 3 Gate Threshold Voltage vs. Ambient Temperature
0.6
0.4
0.2
0.1
0
1
-50
0.001
2
1
0
0
T = 25 C
A
-25
T , AMBIENT TEMPERATURE (°C)
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
o
A
DS
0
V
I , DRAIN CURRENT (A)
1
D
GS
0.01
= 2.0V
25
V
GS
V
=1.8V
GS
50
= 1.6V
2
V
GS
= 1.4V
75
V
0.1
GS
100
= 1.2V
V
GS
3
= 1.0V
125 150
4
1
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Fig. 6 Static Drain-Source, On-Resistance vs. Gate-Source Voltage
Fig. 4 Static Drain-Source On-State Resistance vs. Drain Current
4
3
2
0.6
0.4
0.2
5
1
0
0
0
Fig. 2
0.001
V
Reverse Drain Current vs. Source-Drain Voltage
1
GS
V
, GATE-SOURCE VOLTAGE (V)
GS
I DRAIN CURRENT (A)
, GATE-SOURCE VOLTAGE (V)
D ,
2
0.01
3
DMN2005DLP4K
4
0.1
5
© Diodes Incorporated
October 2009
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