Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Features
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•
•
•
•
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Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
DMN5L06K
Document number: DS30929 Rev. 5 - 2
Low On-Resistance
Very Low Gate Threshold Voltage (1.0V max)
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected Up To 2kV
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10mS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
ESD protected up to 2kV
Characteristic
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
@T
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
Pulsed (Note 3)
@ T
TOP VIEW
Continuous
C
= 25°C
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Symbol
R
SOT-23
BV
V
I
DS(ON)
I
I
D(ON)
C
1 of 4
|Y
V
C
C
GS(th)
DSS
GSS
oss
Gate
SD
rss
DSS
iss
fs
|
EQUIVALENT CIRCUIT
Mechanical Data
•
•
•
•
•
•
•
•
Gate
Protection
Diode
T
Symbol
Symbol
J
V
V
R
, T
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P
DSS
GSS
I
θ JA
D
0.49
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
D
Min
200
0.5
0.5
STG
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Drain
N-CHANNEL ENHANCEMENT MODE MOSFET
Source
Typ
1.4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-65 to +150
Max
500
1.0
3.0
2.5
2.0
1.4
5.0
60
50
50
25
⎯
⎯
⎯
1
Value
Value
±20
300
800
350
357
50
G
TOP VIEW
Unit
mS
nA
μA
nA
nA
pF
pF
pF
D
V
V
Ω
A
V
S
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
GS
DS
GS
GS
GS
DS
GS
GS
GS
GS
DS
GS
DS
= 0V, I
= 50V, V
= ±12V, V
= ±10V, V
= ±5V, V
= V
= 1.8V, I
= 2.5V, I
= 5.0V, I
= 10V, V
=10V, I
= 0V, I
= 25V, V
Test Condition
DMN5L06K
GS
© Diodes Incorporated
, I
°C/W
Unit
Unit
D
mW
S
mA
D
°C
D
V
V
January 2009
= 10μA
= 115mA
GS
D
D
D
GS
DS
DS
= 0.2A
= 250μA
DS
DS
= 50mA
= 50mA
= 50mA
= 0V
= 0V
= 7.5V
= 0V
= 0V
= 0V