DMN5 DIODES [Diodes Incorporated], DMN5 Datasheet - Page 2

• Manufacturer Part Number: DMN5
• Description: DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
• Manufacturer: DIODES [Diodes Incorporated]

Electrical Characteristics
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 8 - 2
4. Short duration pulse test used to minimize self-heating effect.
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DS
Characteristic
@T
A
= 25°C unless otherwise specified
@ T
C
= 25°C
www.diodes.com
Symbol
R
BV
V
I
DS (ON)
I
I
D(ON)
C
2 of 6
|Y
V
C
C
GS(th)
DSS
GSS
oss
SD
rss
DSS
iss
fs
|
0.49
Min
200
0.5
0.5
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
1.4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Fig. 2 Typical Transfer Characteristics
V
DMN5/L06VK/L06VAK/010VAK
GS
, GATE-SOURCE VOLTAGE (V)
Max
500
1.0
3.0
2.5
2.0
1.4
5.0
60
50
50
25
⎯
⎯
⎯
1
Unit
mS
nA
µA
nA
nA
pF
pF
pF
V
V
Ω
A
V
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
GS
DS
GS
GS
GS
DS
GS
GS
GS
GS
DS
GS
DS
= 0V, I
= 50V, V
= ±12V, V
= ±10V, V
= ±5V, V
= V
= 1.8V, I
= 2.5V, I
= 5.0V, I
= 10V, V
=10V, I
= 0V, I
= 25V, V
Test Condition
GS
© Diodes Incorporated
, I
D
S
D
D
January 2010
= 10μA
= 115mA
GS
D
D
D
GS
DS
DS
= 0.2A
= 250μA
DS
DS
= 50mA
= 50mA
= 50mA
= 0V
= 0V
= 7.5V
= 0V
= 0V
= 0V