GR20-G EIC [EIC discrete Semiconductors], GR20-G Datasheet - Page 2

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GR20-G

Manufacturer Part Number
GR20-G
Description
HIGH VOLTAGE
Manufacturer
EIC [EIC discrete Semiconductors]
Datasheet
Page 2 of 2
0.001
0.01
0.5
0.4
0.3
0.2
0.1
1.0
0.1
0
0
0.8 1.0
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
FIG.2 - DERATING CURVE FOR OUTPUT
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
60Hz RESISTIVE OR INDUCTIVE LOAD
Pulse Width = 300 μs
25
AMBIENT TEMPERATURE, (
2% Duty Cycle
RATING AND CHARACTERISTIC CURVES ( GR15-G ~ GR20-G )
T
RECTIFIED CURRENT
1.2
FORWARD VOLTAGE, (V)
J
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
= 25 °C
+
50
1.4
(approx)
50 Vdc
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
75
1.6
50 Ω
1.8
GR15-G
100
2.0
125
1 Ω
D.U.T.
2.2
GR20-G
10 Ω
150
2.4
°
C)
2.6
175
OSCILLOSCOPE
2.8
( NOTE 1 )
GENERATOR
( NOTE 2 )
PULSE
0.01
25
20
15
10
1.0
0.1
5
0
10
0
1
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
+ 0.5 A
PERCENT OF RATED REVERSE
- 1.0 A
- 0.25
NUMBER OF CYCLES AT 60Hz
20
2
0
FORWARD SURGE CURRENT
8.3 ms SINGLE HALF SINE WAVE
Certificate TH97/10561QM
40
4
1
VOLTAGE, (%)
6
60
SET TIME BASE FOR 50/100 ns/cm
Trr
10
T
T
80
J
J
Ta = 50 °C
= 100 °C
= 25 °C
20
100
40
120
Rev. 03 : July 13, 2007
60 100
140
Certificate TW00/17276EM

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