HSMS-2860 HP [Agilent(Hewlett-Packard)], HSMS-2860 Datasheet - Page 4

• Manufacturer Part Number: HSMS-2860
• Description: Surface Mount Microwave Schottky Detector Diodes
• Manufacturer: HP [Agilent(Hewlett-Packard)]

Typical Parameters, Single Diode
Applications Information
See the HSMS-285A data sheet.
10000
Figure 4. +25 C Output Voltage vs.
Input Power, HSMS-2850 at Zero Bias,
HSMS-2860 at 3 A Bias.
Figure 1. Typical Forward Current vs.
Forward Voltage, HSMS-2850 Series.
1000
Figure 7. Voltage Sensitivity as a
Function of DC Bias Current,
HSMS-2860.
0.01
100
100
0.1
40
35
30
25
20
15
10
0.1
10
10
5
1
1
-50
.1
0
R
0.2
L
V
= 100 K
Input Power =
Data taken in fixed-tuned
R
F
-40
L
0.4 0.6
–30 dBm @ 2.45 GHz
FR4 circuit
– FORWARD VOLTAGE (V)
915 MHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
= 100 K
BIAS CURRENT ( A)
POWER IN (dBm)
1
-30
0.8 1.0
2.45 GHz
5.8 GHz
-20
1.2
10
1.4
-10
1.6
100
1.8
0
Figure 2. Typical Forward Current vs.
Forward Voltage at Temperature,
HSMS-2860 Series.
Figure 5. +25 C Expanded Output
Voltage vs. Input Power. See Figure 4.
Figure 8. Output Voltage vs.
Temperature, HSMS-2850 Series.
100
.01
10
0.3
.1
3.1
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
30
10
1
0.1 0.2 0.3 0.4
1
-50
0
MEASUREMENTS MADE USING A
FR4 MICROSTRIP CIRCUIT.
10
R
L
FORWARD VOLTAGE (V)
= 100 K
20 30
2.45 GHz
DIODES TESTED IN FIXED-TUNED
FR4 MICROSTRIP CIRCUITS.
TEMPERATURE ( C)
POWER IN (dBm)
FREQUENCY = 2.45 GHz
40 50
0.5
-40
T
T
T
P
R
0.6
A
A
A
915 MHz
5.8 GHz
IN
L
60
= +85 C
= +25 C
= –55 C
= 100 K
= -40 dBm
0.7
70
0.8 0.9
80
90
1.0
-30
100
10,000
1000
Figure 3. Typical Forward Voltage
Match, HSMS-2860 Pairs.
Figure 6. Dynamic Transfer
Characteristic as a Function of DC Bias,
HSMS-2860.
100
100
10
10
1
1
–40
0.05
4
–30
FORWARD VOLTAGE (V)
0.10
POWER IN (dBm)
I
F
(left scale)
–20
Frequency = 2.45 GHz
Fixed-tuned FR4 circuit
R
L
0.15
= 100 K
–10
V
F
(right scale)
0.20
20 A
5 A
0
0.25
10
10
1
10 A