HSMS-2800 HP [Agilent(Hewlett-Packard)], HSMS-2800 Datasheet - Page 4

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HSMS-2800

Manufacturer Part Number
HSMS-2800
Description
Surface Mount RF Schottky Barrier Diodes
Manufacturer
HP [Agilent(Hewlett-Packard)]
Datasheet

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Typical Performance, T
Figure 1. Forward Current vs.
Forward Voltage at Temperatures.
Figure 4. Total Capacitance vs.
Reverse Voltage.
0.01
100
0.1
1.5
0.5
10
1
2
1
0
0 0.1
0
V
V
F
R
10
0.2
– FORWARD VOLTAGE (V)
– REVERSE VOLTAGE (V)
0.3
20
0.4
0.5 0.6
T
T
T
T
A
A
A
A
30
= +125°C
= +75°C
= +25°C
= –25°C
0.7
40
0.8
C
0.9
= 25
50
°
C (unless otherwise noted), Single Diode
100,000
10,000
Figure 2. Reverse Current vs.
Reverse Voltage at Temperatures.
Figure 5. Typical V
Quads.
1000
100
0.3
30
10
10
1
1
0.2
0
V
V
0.4
F
R
10
- FORWARD VOLTAGE (V)
– REVERSE VOLTAGE (V)
0.6
20
f
0.8
I
∆V
Match, Pairs and
F
T
T
T
(Left Scale)
F
A
A
A
30
(Right Scale)
= +125°C
= +75°C
= +25°C
1.0
40
1.2
1.4
50
30
10
1
0.3
Figure 3. Dynamic Resistance vs.
Forward Current.
1000
100
4
10
1
0.1
I
F
– FORWARD CURRENT (mA)
1
10
100

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