TA1360AFG_05 TOSHIBA [Toshiba Semiconductor], TA1360AFG_05 Datasheet - Page 67
![no-image](/images/no-image-200.jpg)
TA1360AFG_05
Manufacturer Part Number
TA1360AFG_05
Description
YCbCr/YPbPr Signal and Sync Processor for Digital TV, Progressive Scan TV and Double Scan TV
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.TA1360AFG_05.pdf
(110 pages)
- Current page: 67 of 110
- Download datasheet (2Mb)
Note No.
P27
Y group delay correction
Characteristics
SW71
B
SW70
B
Test Conditions
SW Mode
SW68
A
SW64
B
SW74
ON
1. Input Multi Burst signal (4.2-MHz frequency, 0.1 Vp-p at #68) of A signal in TPA. Set unicolor to maximum
2. Set sharpness to flat (DEC [30]),
3. Sine wave signal A input
4. When group delay correction is
5. When group delay correction is
6. Calculate the following equations.
Note: Sine wave input starts and ends within the picture period such as a burst signal. The wave is not
(1111111), SRT-GAIN to minimum (00000), and Color detail enhancer (CDE) to minimum (00000).
APACON peak frequency to 4.5
M (11), and monitor #12.
becomes like signal B on #12 as
shown in the figure on the right.
Measure S
set to minimum (0000), signal A
becomes like signal C on #12.
Measure S
set to maximum (1111), signal A
becomes like signal D on #12.
Measure S
G
G
G
G
continuous.
AMIN
BMIN
AMAX
BMAX
67
= 20 × og
= 20 × og
= 20 × og
= 20 × og
A
AMIN
AMAX
and S
l
l
l
l
and S
and S
(S
(S
B
(S
(S
.
AMIN
BMIN
AMAX
BMAX
BMIN
Test Method (Test condition: V
BMAX
/S
/S
/S
/S
.
A
B
.
) [dB]
) [dB]
A
B
) [dB]
) [dB]
Signal
Signal
Signal
Signal
C
A
B
D
S
AMIN
S
AMAX
S
CC
A
= 9 V/2 V, Ta = 25 ± 3 ° C)
TA1360AFG
2005-08-18
S
S
BMIN
B
S
BMAX
Related parts for TA1360AFG_05
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
![TD62001APG](/images/no-image3.png)
Part Number:
Description:
TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
![TD74BC541P](/images/no-image3.png)
Part Number:
Description:
TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
![2SJ567_09](/images/no-image3.png)
Part Number:
Description:
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
![2SJ610_09](/images/no-image3.png)
Part Number:
Description:
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
![2SJ681_09](/images/no-image3.png)
Part Number:
Description:
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
![MG100Q2YS65H](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MG300J2YS40](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MG100Q2YS11](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MP7003](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MG30G6EL2](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MP6759](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MIG400J101H](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MIG30J103H](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MG600J2YS60A](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MG1200V1US51](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet: