UPA2791GR NEC [NEC], UPA2791GR Datasheet

UPA2791GR

Manufacturer Part Number

UPA2791GR

Description

MOS FIELD EFFECT TRANSISTOR SWITCHING N- AND P-CHANNEL POWER MOS FET

Manufacturer

NEC [NEC]

Datasheet

1.UPA2791GR.pdf (12 pages)

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Company:

Meier Automation Equipment Co., Limited

Part Number:

UPA2791GR

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Company:

Meier Automation Equipment Co., Limited

Part Number:

UPA2791GR-E1-AT

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Quantity:

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Document No. G18207EJ2V0DS00 (2nd edition)

Date Published November 2007 NS

Printed in Japan

DESCRIPTION

Transistors designed for switching application.

• Low gate charge

• Built-in gate protection diode

• Small and surface mount package (Power SOP8)

ORDERING INFORMATION

Note Pb-free (This product does not contain Pb in the external electrode and other parts.)

EQUIVALENT CIRCUIT

Gate

Protection

Diode

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with

FEATURES

• Low on-state resistance

N-channel Q

P-channel Q

The

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

N-channel R

P-channel R

PA2791GR-E1-AT

PA2791GR-E2-AT

PART NUMBER

PA2791GR is N- and P-channel MOS Field Effect

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

caution for electrostatic discharge. V

N-channel

Source

Drain

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

DS(on)1

DS(on)2

DS(on)1

DS(on)2

= 10 nC TYP. (V

= 8.3 nC TYP. (V

Body

Diode

= 82 mΩ MAX. (V

= 110 mΩ MAX. (V

= 36.0 mΩ MAX. (V

= 50.0 mΩ MAX. (V

Note

N- AND P-CHANNEL POWER MOS FET

LEAD PLATING

Gate

Protection

Diode

Pure Sn

= 10 V)

= −10 V)

The mark <R> shows major revised points.

= −10 V, I

= −4.5 V, I

P-channel

= 10 V, I

= 4.5 V, I

Source

DATA SHEET

Drain

SWITCHING

ESD

= −3.0 A)

± 600 V TYP. (C = 100 pF, R = 1.5 kΩ)

Body

Diode

= 3.0 A)

= −3.0 A)

= 3.0 A)

MOS FIELD EFFECT TRANSISTOR

Tape 2500

PACKING

p/reel

5.37 MAX.

PACKAGE DRAWING (Unit: mm)

0.40

1.27

+0.10

–0.05

PA2791GR

0.78 MAX.

Power SOP8

PACKAGE

0.12 M

N-channel

P-channel

0.5 ± 0.2

6.0 ± 0.3

4.4

7, 8 : Drain 1

5, 6 : Drain 2

: Source 1

: Gate 1

: Source 2

: Gate 2

2006, 2007

0.8

0.10

Related parts for UPA2791GR

UPA2791GR Summary of contents

Page 1

N- AND P-CHANNEL POWER MOS FET DESCRIPTION μ The PA2791GR is N- and P-channel MOS Field Effect Transistors designed for switching application. FEATURES • Low on-state resistance N-channel R = 36.0 mΩ MAX. (V DS(on 50.0 mΩ MAX. ...

Page 2

ABSOLUTE MAXIMUM RATINGS (T PARAMETER Drain to Source Voltage ( Gate to Source Voltage ( Note2 Drain Current (DC 25°C) C Note1 Drain Current (pulse) Note2 Total Power Dissipation (1 ...

Page 3

ELECTRICAL CHARACTERISTICS (T N-channel CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time ...

Page 4

P-channel CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 5

TYPICAL CHARACTERISTICS (T A (1) N-channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 120 140 160 - Ambient Temperature - ° FORWARD BIAS SAFE ...

Page 6

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 4 0 Drain to Source Voltage - V DS GATE TO SOURCE CUT-OFF VOLTAGE vs. ...

Page 7

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 Pulsed 4 - 100 - Channel Temperature - ° SWITCHING CHARACTERISTICS ...

Page 8

P-channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 120 140 160 T - Ambient Temperature - °C A FORWARD BIAS SAFE OPERATING AREA -100 I ...

Page 9

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -25 - − -15 − 4.5 V -10 -5 Pulsed 0 0 -0.5 -1 -1 Drain to Source Voltage - V DS GATE TO ...

Page 10

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 160 140 120 V = −4 100 80 − Pulsed 0 - 100 - Channel Temperature - ° SWITCHING CHARACTERISTICS 100 ...

Page 11

TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Reel side MARKING INFORMATION RECOMMENDED SOLDERING CONDITIONS μ The PA2791GR should be soldered and mounted under the following recommended conditions. For soldering methods ...

Page 12

The information in this document is current as of November, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

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