UPA2743T1A-E1-AY RENESAS [Renesas Technology Corp], UPA2743T1A-E1-AY Datasheet

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UPA2743T1A-E1-AY

Manufacturer Part Number
UPA2743T1A-E1-AY
Description
MOS FIELD EFFECT TRANSISTOR
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet
To our customers,
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Renesas Electronics website: http://www.renesas.com
Old Company Name in Catalogs and Other Documents
April 1
Renesas Electronics Corporation
st
, 2010

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UPA2743T1A-E1-AY Summary of contents

Page 1

To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...

Page 2

All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

Page 3

N-CHANNEL POWER MOSFET DESCRIPTION μ The PA2743T1A is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer. FEATURES • Low on-state resistance R = 3.3 mΩ MAX DS(on ...

Page 4

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current I Gate Leakage Current I Gate to Source Cut-off Voltage V Note Forward Transfer Admittance | y Note Drain to Source On-state Resistance R R Input Capacitance C Output Capacitance ...

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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 - Ambient Temperature - ° TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 100 ...

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GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3 2.5 2 1.5 1 0.5 0 -75 - Channel Temperature - °C ch DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 4.5 ...

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DYNAMIC INPUT CHARACTERISTICS Gate Charge - nC G ORDERING INFORMATION PART NUMBER LEAD PLATING Note μ PA2743T1A-E1-AY Pure ...

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The information in this document is current as of May, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets, etc., for the most up-to-date specifications of ...

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