AO4404AL AOSMD [Alpha & Omega Semiconductors], AO4404AL Datasheet
AO4404AL
Manufacturer Part Number
AO4404AL
Description
N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
AOSMD [Alpha & Omega Semiconductors]
Datasheet
1.AO4404AL.pdf
(4 pages)
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4404A uses advanced trench technology to
provide excellent R
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance. Standard
Product AO4404A is Pb-free (meets ROHS & Sony
259 specifications). AO4404AL is a Green Product
ordering option. AO4404A and AO4404AL are
electrically identical.
AO4404A
N-Channel Enhancement Mode Field Effect Transistor
A
DS(ON)
B
T
T
T
T
A
A
A
A
S
S
S
G
=25°C
=70°C
=25°C
=70°C
, low gate charge and
C
SOIC-8
A
A
A
=25°C unless otherwise noted
D
D
D
D
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
D
, T
STG
Symbol
Features
V
I
R
R
R
R
D
R
DS
DS(ON)
DS(ON)
DS(ON)
θJA
θJL
= 8.5A (V
(V) = 30V
G
< 24mΩ (V
< 30mΩ (V
< 48mΩ (V
Maximum
-55 to 150
GS
±12
Typ
8.5
7.1
2.8
1.8
30
60
37
70
26
= 10V)
D
S
GS
GS
GS
= 10V)
= 4.5V)
= 2.5V)
Max
100
45
36
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A
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AO4404AL Summary of contents
Page 1
... PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4404A is Pb-free (meets ROHS & Sony 259 specifications). AO4404AL is a Green Product ordering option. AO4404A and AO4404AL are electrically identical ...
Page 2
AO4404A Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current ...
Page 3
AO4404A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 10V 50 4. (Volts) DS Fig 1: On-Region Characteristics =2. (A) D ...
Page 4
AO4404A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 V =15V DS I =8. (nC) g Figure 7: Gate-Charge Characteristics 100.0 R DS(ON) 100µs limited 1ms 10.0 10ms 0.1s 1.0 0.1 ...