K9F5608Q0C-D SAMSUNG [Samsung semiconductor], K9F5608Q0C-D Datasheet - Page 40

• Manufacturer Part Number: K9F5608Q0C-D
• Description: 32M x 8 Bit 16M x 16 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F5608Q0C
K9F5608D0C
K9F5608U0C
Rp value guidance
Rp(min, 1.8V part) =
Rp(min, 2.65V part) =
Rp(min, 3.3V part) =
where I
Rp(max) is determined by maximum permissible limit of tr
L
is the sum of the input currents of all devices tied to the R/B pin.
K9F5616Q0C
K9F5616D0C
K9F5616U0C
100n
100n
200n
200n
300n
100n
300n
200n
300n
V
V
V
CC
CC
CC
(Max.) - V
(Max.) - V
(Max.) - V
I
I
I
OL
OL
OL
@ Vcc = 1.8V, Ta = 25
2.3
2.4
@ Vcc = 2.65V, Ta = 25
@ Vcc = 3.3V, Ta = 25
1.7
1K
+ I
+ I
+ I
1K
1K
30
30
1.7
2.3
100
3.6
OL
OL
OL
Ibusy
Ibusy
Ibusy
L
L
L
tf
tf
tf
(Max.)
(Max.)
(Max.)
tr
tr
tr
60
0.85
60
200
1.2
2K
1.1
2K
2K
1.7
2.3
3.6
40
=
=
=
Rp(ohm)
Rp(ohm)
Rp(ohm)
90
300
C , C
0.75
3K
3K
0.8
3K
1.7
2.3
3.6
90
3mA + I
3mA + I
8mA + I
C , C
C , C
0.57
1.85V
2.5V
3.2V
L
L
= 30pF
L
= 100pF
2.3
= 30pF
1.7
L
L
L
0.6
0.43
400
120
120
3.6
4K
4K
4K
0.55
2m
2m
2m
3m
1m
3m
1m
3m
1m
FLASH MEMORY