UPA1793G NEC [NEC], UPA1793G Datasheet

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UPA1793G

Manufacturer Part Number
UPA1793G
Description
SWITCHING N- AND P-CHANNEL POWER MOS FET
Manufacturer
NEC [NEC]
Datasheet
1.UPA1793G.pdf (12 pages)

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Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
UPA1793G
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
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Part Number:
UPA1793G
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Document No. G16059EJ1V0DS00 (1st edition)
Date Published September 2002 NS CP(K)
Printed in Japan
designed for Motor Drive application.
ORDERING INFORMATION
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
DESCRIPTION
FEATURES
The PA1793 is N- and P-Channel MOS Field Effect Transistors
Low on-state resistance
N-Channel R
P-Channel R
Low input capacitance
N-Channel C
P-Channel C
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
PART NUMBER
PA1793G
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
R
R
R
R
DS(on)1
DS(on)2
DS(on)3
DS(on)1
DS(on)2
DS(on)3
iss
iss
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
= 160 pF TYP.
= 370 pF TYP.
= 115 m MAX. (V
= 120 m MAX. (V
= 190 m MAX. (V
= 69 m
= 72 m
= 107 m
N- AND P-CHANNEL POWER MOS FET
MAX. (V
MAX. (V
MAX. (V
Power SOP8
PACKAGE
GS
GS
GS
GS
GS
GS
= 4.5 V, I
= 4.0 V, I
= –4.5 V, I
= –4.0 V, I
= –2.5 V, I
= 2.5 V, I
DATA SHEET
SWITCHING
D
D
D
D
D
D
= 1.5 A)
= 1.5 A)
= 1.0 A)
= –1.5 A)
= –1.5 A)
= –1.0 A)
MOS FIELD EFFECT TRANSISTOR
Gate
Gate
Protection
Diode
N-Channel
Source
Drain
PACKAGE DRAWING (Unit: mm)
8
1
5.37 Max.
EQUIVALENT CIRCUIT
0.40
1.27
Body
Diode
+0.10
–0.05
0.78 Max.
5
4
0.12 M
N-Channel
P-Channel
Gate
Gate
Protection
Diode
PA1793
0.5 ±0.2
©
6.0 ±0.3
1
2
7, 8
3
4
5, 6
4.4
P-Channel
; Source 1
; Gate 1
; Drain 1
; Source 2
; Gate 2
; Drain 2
Source
Drain
0.8
Body
Diode
2002
0.10

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UPA1793G Summary of contents

Page 1

N- AND P-CHANNEL POWER MOS FET DESCRIPTION The PA1793 is N- and P-Channel MOS Field Effect Transistors designed for Motor Drive application. FEATURES Low on-state resistance N-Channel MAX. (V DS(on MAX. (V ...

Page 2

ABSOLUTE MAXIMUM RATINGS (T Parameter Drain to Source Voltage ( Gate to Source Voltage ( Drain Current (DC) Note1 Drain Current (pulse) Note2 Total Power Dissipation (1 unit) Note2 Total Power Dissipation ...

Page 3

ELECTRICAL CHARACTERISTICS (T A) N-Channel Characteristice Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 4

B) P-Channel Characteristics Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total ...

Page 5

TYPICAL CHARACTERISTICS ( N-Channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA 100 Mounted ...

Page 6

A) N-Channel FORWARD TRANSFER CHARACTERISTICS Pulsed 125 C ch 0.1 0. Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 V ...

Page 7

A) N-Channel DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 150 100 4 100 T - Channel Temperature - C ch CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE ...

Page 8

B) P-Channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA - 100 Mounted on ceram ic ...

Page 9

B) P-Channel FORWARD TRANSFER CHARACTERISTICS - Pulsed - 1 - 0 Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 ...

Page 10

P-Channel DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE ...

Page 11

DataSheet G16059EJ1V0DS PA1793 11 ...

Page 12

The information in this document is current as of September, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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