AO8808AL AOSMD [Alpha & Omega Semiconductors], AO8808AL Datasheet - Page 4

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AO8808AL

Manufacturer Part Number
AO8808AL
Description
Dual N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
AOSMD [Alpha & Omega Semiconductors]
Datasheet
AO8808A
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100.0
10.0
5
4
3
2
1
0
1.0
0.1
0
0.01
0.1
0.1
10
0.00001
1
R
limited
Figure 9: Maximum Forward Biased Safe
T
T
DS(ON)
J(Max)
A
=25°C
Figure 7: Gate-Charge Characteristics
4
=150°C
D=T
T
R
J,PK
θJA
Operating Area (Note E)
=90°C/W
on
=T
V
I
0.0001
D
/T
DS
=8A
A
1
+P
=10V
8
DM
V
Q
DS
.Z
g
1s
θJA
(nC)
(Volts)
1ms
10ms
.R
10s
Figure 11: Normalized Maximum Transient Thermal Impedance
DC
0.1s
θJA
12
0.001
100µs
Single Pulse
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
16
10µs
0.01
100
20
Pulse Width (s)
0.1
40
30
20
10
3000
2500
2000
1500
1000
0
0.001
500
Figure 10: Single Pulse Power Rating Junction-to-
0
0
C
0.01
1
rss
C
Figure 8: Capacitance Characteristics
C
oss
iss
P
D
5
0.1
T
Ambient (Note E)
on
Pulse Width (s)
10
T
V
DS
1
(Volts)
10
10
100
T
T
J(Max)
A
=25°C
15
=150°C
100
1000
1000
20

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