UPA1715G NEC [NEC], UPA1715G Datasheet
UPA1715G
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UPA1715G Summary of contents
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DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES Low on-resistance R = 8.5 m TYP – DS(on 11.0 ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...
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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 I ...
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FORWARD TRANSFER CHARACTERISTICS 100 T = 50˚ 25˚C 25˚C 75˚C 125˚C 150˚C 1 0.1 1.0 2 Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT T = 50˚C A 25˚C 25˚C ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 100 150 Channel Temperature ...
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Data Sheet G13669EJ1V0DS00 PA1715 ...
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Data Sheet G13669EJ1V0DS00 PA1715 7 ...
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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. No part of this document may be copied or reproduced in any form or by any means ...