HAT2215R-EL-E RENESAS [Renesas Technology Corp], HAT2215R-EL-E Datasheet

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HAT2215R-EL-E

Manufacturer Part Number
HAT2215R-EL-E
Description
Silicon N Channel Power MOS FET High Speed Power Switching
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet
HAT2215R, HAT2215RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Rev.3.00 Dec. 22, 2004 page 1 of 7
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
2. Value at Tch = 25 C, Rg
3. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
4. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
Item
10 s, duty cycle
SOP-8
G
2
MOS1
I
1 %
D(pulse)
E
Pch
Pch
Symbol
I
AP
50
D
S
7 8
AR
V
V
Tstg
Tch
1
I
I
DSS
GSS
DR
Note 2
D
D
Note 2
Note3
Note4
Note1
4
G
MOS2
D
5 6
S
3
D
–55 to +150
HAT2215R
20.4
150
3.4
3.4
1.5
2.2
80
20
8
7
6
5
1 2
Ratings
3 4
1, 3
2, 4
5, 6, 7, 8 Drain
HAT2215RJ
–55 to +150
20.4
1.54
150
3.4
3.4
3.4
1.5
2.2
80
20
Source
Gate
10 s
10 s
REJ03G0486-0300
Dec.22.2004
(Ta = 25°C)
Unit
mJ
Rev.3.00
W
W
V
V
A
A
A
A
C
C

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HAT2215R-EL-E Summary of contents

Page 1

... HAT2215R, HAT2215RJ Silicon N Channel Power MOS FET High Speed Power Switching Features Low on-resistance Capable of 4.5 V gate drive High density mounting Outline SOP Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current ...

Page 2

... HAT2215R, HAT2215RJ Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Zero gate voltage HAT2215R drain current HAT2215RJ Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance ...

Page 3

... HAT2215R, HAT2215RJ Main Characteristics Power vs. Temperature Derating 4.0 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 3.0 2.0 1 100 Ambient Temperature Typical Output Characteristics 10 4 Pulse Test 0 5 Drain to Source Voltage V Drain to Source Saturation Voltage vs Gate to Source Voltage ...

Page 4

... HAT2215R, HAT2215RJ Static Drain to Source on State Resistance vs. Temperature 250 Pulse Test 200 150 100 - Case Temperature Body-Drain Diode Reverse Recovery Time 100 100 A / µ Reverse Drain Current Dynamic Input Characteristics ...

Page 5

... HAT2215R, HAT2215RJ Reverse Drain Current vs. Source to Drain Voltage 0.4 0.8 Source to Drain Voltage Switching Time Test Circuit Vin Monitor Rg Vin 10 V Avalanche Test Circuit V DS Monitor Rg Vin 50 Ω Rev.3.00 Dec. 22, 2004 page 2.0 1.6 1 – 0.8 0.4 Pulse Test ...

Page 6

... HAT2215R, HAT2215RJ Normalized Transient Thermal Impedance vs. Pulse Width(1 Drive Operation 0.1 0.01 0.001 0.0001 10 µ 100 µ Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation 0.5 0.1 0.01 0.001 0.0001 100 µ 10 µ Rev.3.00 Dec. 22, 2004 page θch - f(t) = γs (t) x θ θ ...

Page 7

... Base material dimension Ordering Information Part Name HAT2215R-EL-E 2500 pcs HAT2215RJ-EL-E 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. ...

Page 8

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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