SI6463BDQ_05 VISHAY [Vishay Siliconix], SI6463BDQ_05 Datasheet
SI6463BDQ_05
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SI6463BDQ_05 Summary of contents
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P-Channel 1.8-V (G-S) MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS DESCRIPTION The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. model is extracted and optimized over the ...
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SPICE Device Model Si6463BDQ Vishay Siliconix SPECIFICATIONS (T = 25°C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source ...
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COMPARISON OF MODEL WITH MEASURED DATA (T Document Number: 72137 S-52526Rev. B, 12-Dec-05 SPICE Device Model Si6463BDQ Vishay Siliconix =25°C UNLESS OTHERWISE NOTED) J www.vishay.com 3 ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...