SI6544BDQ_08 VISHAY [Vishay Siliconix], SI6544BDQ_08 Datasheet - Page 4

• Manufacturer Part Number: SI6544BDQ_08
• Description: N- and P-Channel 30-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si6544BDQ
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.0
0.1
20
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
T
J
0.3
= 150 °C
V
SD
0
T
- Source-to-Drain Voltage (V)
Threshold Voltage
J
25
- Temperature (°C)
0.6
I
D
50
= 250 µA
0.9
75
T
J
= 25 °C
0.01
100
100
0.1
10
1
0.1
1.2
Limited by R
* V
125
Safe Operating Area, Junction-to-Case
GS
> minimum V
150
1.5
V
DS
Single Pulse
DS(on)
T
- Drain-to-Source Voltage (V)
C
1
= 25 °C
*
GS
at which R
10
DS(on)
0.15
0.12
0.09
0.06
0.03
0.00
200
160
120
80
40
0
10
0
is specified
-3
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
2
100
10
V
GS
-2
- Gate-to-Source Voltage (V)
4
I
Time (s)
D
S-81056-Rev. B, 12-May-08
10
= 4.3 A
Document Number: 72244
-1
6
1
8
10
10