HAT2077R-EL-E RENESAS [Renesas Technology Corp], HAT2077R-EL-E Datasheet - Page 4

• Manufacturer Part Number: HAT2077R-EL-E
• Description: Silicon N Channel MOS FET High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2077R
Rev.2.00 Sep 07, 2005 page 4 of 6
1000
500
200
100
500
400
300
200
100
Static Drain to Source on State Resistance
0.5
0.4
0.3
0.2
0.1
50
20
10
0
–40
0
0.1
0
I
Reverse Drain Current I
V
Pulse Test
D
V
Case Temperature
Dynamic Input Characteristics
DS
GS
= 3 A
Body-Drain Diode Reverse
0.3
Gate Charge
= 10 V
0
V
8
DD
vs. Temperature
V
Recovery Time
= 160 V
1
DD
100 V
40
16
50 V
= 160 V
100 V
di / dt = 100 A / µs
V
3
50 V
GS
80
24
= 0, Ta = 25°C
Qg (nc)
10
I
D
Tc
2 A
= 3 A
DR
120
V
32
30
GS
(°C)
(A)
1 A
160
100
40
20
16
12
8
4
0
5000
2000
1000
500
200
100
100
500
200
0.5
0.2
0.1
50
20
10
50
20
10
50
20
10
5
2
1
5
2
1
5
0.1
0.1 0.2
0
Drain to Source Voltage V
V
f = 1 MHz
t d(on)
Forward Transfer Admittance vs.
t r
0.2
GS
Switching Characteristics
= 0
Typical Capacitance vs.
Drain to Source Voltage
20
Drain Current
Drain Current I
V
PW = 5 µs, duty ≤ 1 %
Rg = 10 Ω
0.5 1
0.5 1
GS
Tc = –25°C
= 10 V, V
Drain Current
t d(off)
40
25°C
Coss
Crss
Ciss
2
2
DD
60
t f
75°C
5
5
= 100 V
I
D
D
V
Pulse Test
DS
10
10 20
(A)
(A)
80
= 10 V
DS
20
(V)
100
50
50