HAT2064R-EL-E RENESAS [Renesas Technology Corp], HAT2064R-EL-E Datasheet - Page 4

• Manufacturer Part Number: HAT2064R-EL-E
• Description: Silicon N Channel Power MOS FET Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2064R
Rev.9.00 Sep 07, 2005 page 4 of 6
100
Static Drain to Source on State Resistance
20
16
12
50
20
10
50
40
30
20
10
8
4
0
–40
0
0.1 0.2
0
I
Reverse Drain Current I
Pulse Test
D
Case Temperature
V
Dynamic Input Characteristics
V
= 16 A
DS
Body-Drain Diode Reverse
GS
Gate Charge
20
0
10 V
= 4.5 V
0.5
vs. Temperature
Recovery Time
V
DD
40
40
I
D
V
1
= 25 V
GS
= 2 A, 5 A, 10 A
di / dt = 50 A / µs
V
10 V
GS
5 V
2
2 A, 5 A, 10 A
80
60
= 0, Ta = 25°C
Qg (nc)
V
Tc
DD
5
DR
120
= 25 V
80
10 V
(°C)
10
5 V
(A)
100
160
20
20
16
12
8
4
0
10000
3000
1000
200
100
100
100
300
0.3
0.1
50
20
10
30
10
30
10
5
2
3
1
0.1
0.1
0
Drain to Source Voltage V
Forward Transfer Admittance vs.
t d(on)
0.2
0.3
Switching Characteristics
Typical Capacitance vs.
Drain to Source Voltage
10
Drain Current
Tc = –25°C
Drain Current I
0.5
Drain Current
1
25°C
20
V
Rg = 4.7 Ω, duty ≤ 1 %
GS
1
Coss
Crss
Ciss
3
= 10 V, V
2
30
75°C
t d(off)
t f
10
I
D
t r
D
V
Pulse Test
DS
V
f = 1 MHz
5
DS
(A)
(A)
GS
= 10 V
40
30
DS
= 10 V
= 0
10
(V)
100
20
50