HAT2058R-EL-E RENESAS [Renesas Technology Corp], HAT2058R-EL-E Datasheet - Page 2

• Manufacturer Part Number: HAT2058R-EL-E
• Description: Silicon N Channel Power MOS FET High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2058R, HAT2058RJ
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Electrical Characteristics
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain
current
Zero gate voltage drain
current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note:
Rev.2.00 Sep 07, 2005 page 2 of 7
2. 1 Drive operation: When using the glass epoxy board (FR4 40
3. 2 Drive operation: When using the glass epoxy board (FR4 40
4. Value at Tch = 25 C, Rg
5. Pulse test
10 s, duty cycle
Item
Item
HAT2058R
HAT2058RJ
HAT2058R
HAT2058RJ
1%
50
V
V
Symbol
R
R
V
Coss
(BR) DSS
(BR) GSS
Crss
Ciss
t
t
I
GS (off)
I
I
I
I
|y
DS (on)
DS (on)
V
d (on)
d (off)
DSS
DSS
DSS
DSS
GSS
t
t
t
DF
rr
fs
r
f
|
I
D (pulse)
Pch
Pch
E
Symbol
I
I
AP
AR
D
V
V
Tstg
Tch
I
Note 2
GSS
DSS
DR
Note 4
Note 4
Note 2
Note 3
Min
100
1.0
Note 1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
20
3
0.85
Typ
120
150
420
180
100
110
10
30
60
75
—
—
—
—
—
—
—
—
5
–55 to +150
HAT2058R
Max
145
180
40
40
0.1
2.5
1.1
10
—
—
—
—
—
—
—
—
—
—
—
—
100
150
1
10
32
—
—
20
4
4
2
3
1.6 mm), PW
1.6 mm), PW
Unit
m
m
Value
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
V
A
A
A
A
A
HAT2058RJ
–55 to +150
I
I
V
V
Ta = 125 C
V
V
I
I
I
V
f = 1 MHz
V
V
I
I
di
D
G
D
D
D
F
F
DS
DS
GS
DS
DS
GS
DD
F
= 4 A, V
= 4 A, V
= 10 mA, V
= 2 A, V
= 2 A, V
= 2 A, V
= 100 A, V
/dt = 50 A/ s
100
150
1.6
32
= 100 V, V
= 80 V, V
= 10 V, I
= 10 V, V
= 16 V, V
= 10 V, I
20
4
4
4
2
3
10 s
10 s
Test Conditions
30 V
GS
GS
DS
GS
GS
D
D
= 0
= 0
= 10 V
= 10 V
= 4 V
GS
GS
GS
= 1 mA
= 2 A,
GS
DS
DS
= 0
= 0
= 0
(Ta = 25 C)
(Ta = 25 C)
Note 5
= 0
= 0
= 0
Note 5
Unit
Note 5
Note 5
mJ
W
W
V
V
A
A
A
A
C
C