MT4C4001JC-12/883C AUSTIN [Austin Semiconductor], MT4C4001JC-12/883C Datasheet - Page 6
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MT4C4001JC-12/883C
Manufacturer Part Number
MT4C4001JC-12/883C
Description
1 MEG x 4 DRAM Fast Page Mode DRAM
Manufacturer
AUSTIN [Austin Semiconductor]
Datasheet
1.MT4C4001JC-12883C.pdf
(21 pages)
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(NOTES: 6, 7, 8, 9, 10, 11, 12, 13) (-55°C < T
MT4C4001J
Rev. 2.2 06/05
Write command hold time
Write command hold time (referenced to RAS\)
Write command pulse width
Write command to RAS\ lead time
Write commend to CAS\ lead time
Data-in setup time
Data-in hold time
Data-in hold time (referenced to RAS\)
RAS\ to WE\ delay time
Column address to WE\ delay time
CAS\ to WE\ delay time
Transition time (rise or fall)
Refresh period (1,024 cycles)
RAS\ to CAS\ precharge time
CAS\ setup time (CAS\-BEFORE-RAS\ REFRESH)
CAS\ hold time (CAS\-BEFORE-RAS\ REFRESH)
WE\ hold time (CAS\-BEFORE-RAS\ REFRESH)
WE\ setup time (CAS\-BEFORE-RAS\ REFRESH)
WE\ hold time (WCBR test cycle)
WE\ setup time (WCBR test cycle)
OE\ setup prior to RAS during HIDDEN REFRESH cycle
Output disable
Output enable
OE\ hold time from WE\ during READ-MODIFY-WRITE cycle
PARAMETER
Austin Semiconductor, Inc.
t
t
t
t
t
t
t
t
t
t
t
SYM
t
t
t
t
t
t
t
WCH
WCR
t
RWL
CWL
RWD
AWD
CWD
WRH
WRP
WTH
WTS
t
DHR
RPC
CSR
CHR
ORD
t
t
OEH
t
REF
WP
OD
DS
DH
t
OE
T
MIN
15
50
15
20
20
12
50
95
60
45
10
10
10
10
10
20
0
3
0
5
0
-7
C
6
< 125°C; V
MAX
50
16
15
15
MIN
105
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
15
60
15
20
20
15
60
65
45
10
15
10
10
10
10
20
0
3
0
0
-8
MAX
CC
50
16
20
20
= 5V ±10%)
MIN
130
20
70
20
25
25
18
70
80
55
10
20
10
10
10
10
25
0
3
0
0
-10
MAX
50
16
25
25
MIN
140
25
80
25
30
30
25
90
90
60
10
25
10
10
10
10
25
0
3
0
0
MT4C4001J
-12
MAX
50
16
25
25
DRAM
DRAM
DRAM
DRAM
DRAM
UNITS
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
25, 28
25, 28
25, 28
25, 28
22
22
21
21
21
27
23
26
5
5