K6T0808C1D-DB55 SAMSUNG [Samsung semiconductor], K6T0808C1D-DB55 Datasheet - Page 2
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K6T0808C1D-DB55
Manufacturer Part Number
K6T0808C1D-DB55
Description
32Kx8 bit Low Power CMOS Static RAM
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K6T0808C1D-DB55.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
K6T0808C1D-DB55
Manufacturer:
SAMSUNG
Quantity:
6 000
I/O1
I/O2
I/O3
VSS
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
32Kx8 bit Low Power CMOS Static RAM
FEATURES
PRODUCT FAMILY
1. The parameter is tested with 50pF test load.
PIN DESCRIPTION
K6T0808C1D Family
Pin Name
K6T0808C1D-L
K6T0808C1D-B
K6T0808C1D-P
K6T0808C1D-F
Product Family
Process Technology : TFT
Power Supply Voltage : 4.5~5.5V
Organization : 32Kx8
Low Data Retention Voltage : 2V(Min)
Three state output and TTL Compatible
Package Type : 28-DIP-600B, 28-SOP-450
A
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
0
WE
CS
OE
~A
28-SOP
14
28-DIP
Chip Select Input
Output Enable Input
Write Enable Input
Address Inputs
Function
27
26
25
24
23
22
21
20
19
18
16
15
28
17
28-TSOP1-0813.4 F/R
VCC
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
Operating Temperature
Commercial (0~70 C)
Industrial (-40~85 C)
VCC
VCC
A11
A13
A14
A12
A12
A14
A13
A11
WE
WE
OE
OE
A9
A8
A7
A6
A5
A4
A3
A3
A4
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
14
13
12
11
10
9
8
7
6
5
4
3
2
1
Pin Name
I/O
Vcc
NC
1
Vss
Type1 - Forward
Type1 - Reverse
~I/O
28-TSOP
28-TSOP
8
Data Inputs/Outputs
Power
Ground
No connect
Function
V
4.5 to 5.5V
CC
Range
28
27
26
25
24
23
22
21
20
19
18
17
16
15
15
16
17
18
19
20
21
22
23
24
25
26
27
28
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A2
A1
A0
I/O1
I/O2
I/O3
VSS
I/O4
I/O5
I/O6
I/O7
I/O8
CS
A10
FUNCTIONAL BLOCK DIAGRAM
55
CS
WE
OE
Speed
GENERAL DESCRIPTION
advanced CMOS process technology. The families support
various operating temperature ranges and have various
package types for user flexibility of system design. The fami-
lies also support low data retention voltage for battery back-
up operation with low data retention current.
70ns
1)
The K6T0808C1D families are fabricated by SAMSUNG s
/70ns
I/O
I/O
1
8
Control
Logic
A13
A8
A12
A14
A4
A5
A6
A7
(I
Standby
SB1
30 A
30 A
Power Dissipation
5 A
5 A
, Max)
Clk gen.
Data
cont
Data
cont
Row
select
Operating
(Icc
60mA
2,
A10 A3
Max)
CMOS SRAM
Precharge circuit.
Memory array
256 rows
128
Column select
A0
28-DIP,28-SOP
28-TSOP1-F/R
28-SOP
28-TSOP1-F/R
I/O Circuit
A1 A2
columns
November 1997
PKG Type
Revision 1.0
A9
A11