2SK4002_09 TOSHIBA [Toshiba Semiconductor], 2SK4002_09 Datasheet

2SK4002_09

Manufacturer Part Number

2SK4002_09

Description

Chopper Regulator, DC-DC Converter and Motor Drive Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK4002_09.pdf (6 pages)

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Chopper Regulator, DC-DC Converter and Motor Drive

Applications

Absolute Maximum Ratings

Thermal Characteristics

Low drain−source ON-resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristic

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V)

= 90 V, T

Pulse (t = 1 ms)

Pulse (t = 100 μs)

DSS

= 20 kΩ)

= 2.0 to 4.0 V (V

= 25°C (initial), L = 41 mH, R

(Note 1)

(Note 2)

= 100 μA (max) (V

DS (ON)

(Ta = 25°C)

| = 1.7 S (typ.)

Symbol

DGR

GSS

DSS

stg

Symbol

th (ch−c)

th (ch−a)

2SK4002

= 4.2 Ω (typ.)

= 10 V, I

= 600 V)

−55 to 150

Rating

600

±30

150

= 1 mA)

Max

6.25

125

= 25 Ω, I

°C / W

Unit

°C

= 2 A

Weight: 0.36 g (typ.)

JEDEC

JEITA

TOSHIBA

0.8 MAX.

0.9

1.1 MAX.

1. GATE

2. DRAIN

3. SOURSE

（HEAT SINK）

2.3

6.5 ± 0.2

5.2 ± 0.2

2.3

0.6 ± 0.15

2-7J2B

2009-09-29

―

2SK4002

Unit: mm

0.6 MAX.

1.1 ± 0.2

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