2SJ492-ZJ NEC [NEC], 2SJ492-ZJ Datasheet

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2SJ492-ZJ

Manufacturer Part Number
2SJ492-ZJ
Description
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
Manufacturer
NEC [NEC]
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SJ492-ZJ
Manufacturer:
NEC/RENESAS
Quantity:
12 500
Document No.
Date Published
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (T
THERMAL RESISTANCE
DESCRIPTION
designed for DC/DC converters and motor/lamp driver
circuits.
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. f = 20 kHz, Duty Cycle
Channel to Case
Channel to Ambient
This product is P-Channel MOS Field Effect Transistor
Low on-state resistance
R
R
Low C
Built-in gate protection diode
DS(on)1
DS(on)2
2. PW
3. Starting T
iss
D11264EJ1V0DS00 (1st edition)
December 1998 NS CP(K)
= 100 m
= 185 m
: C
iss
= 1210 pF (TYP.)
10 s, Duty Cycle
ch
(MAX.) (V
(MAX.) (V
Note2
= 25 °C, R
Note3
Note3
DS
DS
A
C
GS
The information in this document is subject to change without notice.
= 25°C)
= 25°C)
= 0 V)
= 0 V)
= 0 V)
GS
GS
A
= –10 V, I
= –4 V, I
P-CHANNEL POWER MOS FET
= 25 , V
10% (+Side)
Note1
1 %
A
D
= 25°C)
D
GS
= –10 A)
INDUSTRIAL USE
V
V
= –10 A)
R
R
I
I
D(pulse)
GSS(AC)
GSS(DC)
V
= –20 V
th(ch-C)
th(ch-A)
DATA SHEET
D(DC)
T
E
T
I
P
P
DSS
AS
stg
AS
SWITCHING
ch
T
T
0
–55 to +150
MOS FIELD EFFECT TRANSISTOR
–20, 0
1.79
83.3
–60
#
#
#
150
–20
1.5
70
40
ORDERING INFORMATION
20
20
80
PART NUMBER
2SJ492-ZJ
2SJ492-S
2SJ492
°C/W
°C/W
mJ
°C
°C
W
W
V
V
V
A
A
A
PACKAGE
TO-220AB
TO-262
TO-263
2SJ492
©
1998

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2SJ492-ZJ Summary of contents

Page 1

... Note1 V –20, 0 GSS(DC D(DC D(pulse 150 ch T –55 to +150 stg I – 10% (+Side – 1.79 th(ch-C) R 83.3 th(ch-A) 2SJ492 PACKAGE 2SJ492 TO-220AB 2SJ492-S TO-262 2SJ492-ZJ TO-263 °C ° °C/W °C/W © 1998 ...

Page 2

... – di/ TEST CIRCUIT 2 SWITCHING TIME D.U. PG Duty Cycle 1 % Data Sheet D11264EJ1V0DS00 2SJ492 MIN. TYP. MAX. UNIT 70 100 m 120 185 m –1.0 –1.5 –2 – 1210 pF 520 pF 180 pF ...

Page 3

... I D(pulse 100 Pulsed Data Sheet D11264EJ1V0DS00 2SJ492 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 100 120 140 160 T - Case Temperature - C C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed ...

Page 4

... PW - Pulse Width - s DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 0 Pulsed 0.2 0.1 10 100 0 GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 2.0 1.5 1.0 0.5 0 100 50 Data Sheet D11264EJ1V0DS00 2SJ492 R = 83.3 ˚C/W th(ch- 1.79 ˚C/W th(ch-c) Single Pulse 10 100 1000 Pulsed Gate to Source Voltage - ...

Page 5

... C rss 10 t d(on) 1.0 100 0 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 Data Sheet D11264EJ1V0DS00 2SJ492 Pulsed = 100 - Drain Current - ...

Page 6

... L - Inductive Load - H 6 SINGLE AVALANCHE ENERGY DERATING FACTOR 160 140 120 100 Starting Tch - Starting Channel Temperature - ˚C Data Sheet D11264EJ1V0DS00 2SJ492 V = – – < = – 100 125 150 ...

Page 7

... TO-262 (MP-25 Fin Cut) 4.8 MAX. (10) 1.3±0 1.3±0.2 0.75±0.3 2.54 TYP. 2.8±0.2 EQUIVALENT CIRCUIT 1.3±0.2 0.5±0.2 Data Sheet D11264EJ1V0DS00 2SJ492 4.8 MAX. 1.3±0.2 2.8±0.2 0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) Drain Body Diode Gate Gate ...

Page 8

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC’s Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. 2SJ492 M4 96. 5 ...

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