2SJ464_07 TOSHIBA [Toshiba Semiconductor], 2SJ464_07 Datasheet
2SJ464_07
Related parts for 2SJ464_07
2SJ464_07 Summary of contents
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L Chopper Regulator, DC-DC Converter and Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: R • High forward transfer admittance: |Y • Low leakage current ...
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Electrical Characteristics Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate ...
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I – −20 Common source −10 −4 25°C −8 Pulse test −16 −6 −12 −8 − − −0.4 −0.8 −1.2 −1.6 0 Drain-source voltage V ( – V ...
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R – (ON) 0.20 Common source Pulse test 0.15 0. − − − −80 − Case temperature Tc (°C) Capacitance – ...
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Duty = 0.5 0.5 0.3 0.2 0.1 0.1 0.05 0.05 0.02 0.03 0.01 0.01 0.005 0.003 10 μ 100 μ Safe Operating Area −300 −100 I D max (pulse)* 100 μs* −50 1 ms* 10 ms* − ...
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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...