2SJ451ZK-TL-E RENESAS [Renesas Technology Corp], 2SJ451ZK-TL-E Datasheet
2SJ451ZK-TL-E
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2SJ451ZK-TL-E Summary of contents
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Silicon P Channel MOS FET Description Low frequency power switching Features Low on-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) Note: Marking is “ZK–”. Absolute Maximum Ratings ...
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Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input ...
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Main Characteristics Maximum Channel Dissipation Curve 200 150 100 100 Ambient Temperature Ta (°C) Typical Output Characteristics –0.20 –10 V –4 V –0.16 –2.5 V –0.12 –0.08 –0. –2 –4 Drain to Source ...
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Static Drain to Source on State Resistance vs. Temperature 10 Pulse Test V = –2 – – Case Temperature Typical Capacitance vs. Drain to Source Voltage 100 Coss 30 ...
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Switching Time Test Circuit Vin Monitor D.U.T. Vin 50 Ω –10 V REJ03G864-0400 Rev.4.00 Sep 07, 2007 Page Vin Vout Monitor –10 V Vout t d(on) Waveform 10% 90% 90% 90% ...
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... A-A Section Ordering Information Part Name 2SJ451ZK-TL-E 3000 pcs 2SJ451ZK-TR-E 3000 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. REJ03G864-0400 Rev.4.00 Sep 07, 2007 Page Previous Code MASS[Typ ...
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Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained ...