DMN3025LFG DIODES [Diodes Incorporated], DMN3025LFG Datasheet - Page 4

• Manufacturer Part Number: DMN3025LFG
• Description: 30V N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: DIODES [Diodes Incorporated]

POWERDI is a registered trademark of Diodes Incorporated.
DMG3025LFG
Document number: DS35642 Rev. 4 – 2
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
30
25
20
15
10
5
0
0
0
0
-50
Figure 7 On-Resistance Variation with Temperature
Figure 9 Diode Forward Voltage vs. Current
-25
0.2
V , SOURCE-DRAIN VOLTAGE (V)
2
T , JUNCTION TEMPERATURE ( C)
SD
Q
J
g
, TOTAL GATE CHARGE
0
Figure 11 Gate Charge
0.4
4
25
V
GS
I = 5A
0.6
D
V
I =
D
6
50
= 4.5V
DS
10
= 15V
T = 25°C
A
A
V
75
0.8
I = 10A
GS
D
8
=
10
100
(nC)
V
1.0
10
°
125
1.2
12
150
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Figure 8 Gate Threshold Variation vs. Ambient Temperature
10,000
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.01
100
1,000
0.1
0
10
-50
100
1
0.1
10
0
T
T = 25°C
Single Pulse
P
J(max)
A
-25
DC
W
R
Limited
T , JUNCTION TEMPERATURE ( C)
= 10s
DS(on)
V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
J
f = 1MHz
Figure 10 Typical Junction Capacitance
= 150°C
DS
V , DRAIN-SOURCE VOLTAGE (V)
P
5
DS
W
0
P
W
= 1s
= 100ms
1
25
P
10
W
I = 250µA
= 10ms
D
50
P
W
P
15
W
= 1ms
= 100µs
75
I = 1mA
D
10
C
100
C
C
20
rss
iss
oss
DMN3025LFG
°
125
P
W
25
= 10 s
© Diodes Incorporated
November 2012
150
µ
100
30