SI8800EDB_11 VISHAY [Vishay Siliconix], SI8800EDB_11 Datasheet
SI8800EDB_11
Related parts for SI8800EDB_11
SI8800EDB_11 Summary of contents
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N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY V (V) R () DS DS(on) 0.080 4 0.090 2 0.105 1 0.150 1.5 ...
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Si8800EDB Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a ...
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.5 1 0.9 0.6 0.3 0 Gate-to-Source Voltage (V) GS Gate Current vs. Gate-Source Voltage thru ...
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Si8800EDB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted 1.4 1.3 1 1.0 0.9 0.8 ...
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.0 2.5 2.0 1.5 1.0 0.5 0 100 T - Ambient Temperature (°C) A Current Derating* Note: When mounted on 1" x 1" FR4 with full copper. * The ...
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Si8800EDB Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with maximum ...
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PACKAGE OUTLINE MICRO FOOT 0 0.8 mm: 4-BUMP ( mm, 0.4 mm PITCH) 800 XXX Mark on Backside of die Recommended Land Notes (Unless otherwise specified): 1. All dimensions are in millimeters. ...
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... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...