SI8472DB VISHAY [Vishay Siliconix], SI8472DB Datasheet - Page 5

• Manufacturer Part Number: SI8472DB
• Description: N-Channel 20-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 63300
S11-1387-Rev. A, 11-Jul-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
100
0.1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
10
1
- 50
0.0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
T
- Source-to-Drain Voltage (V)
Threshold Voltage
J
0.4
T
= 150 °C
J
25
- Temperature (°C)
0.6
50
I
D
75
= 250 μA
0.8
T
0.01
100
J
100
0.1
10
= 25 °C
1
0.1
1.0
Safe Operating Area, Junction-to-Ambient
This document is subject to change without notice.
125
Limited by R
T
* V
A
= 25 °C
GS
150
> minimum V
1.2
V
DS
DS(on)
- Drain-to-Source Voltage (V)
1
*
BVDSS Limited
GS
at which R
DS(on)
10
0.10
0.08
0.06
0.04
0.02
0.00
25
20
15
10
is specified
5
0
0.001
100 μs
100 ms
1 ms
10 ms
10 s, 1 s
0
DC
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.01
100
1
V
GS
- Gate-to-Source Voltage (V)
0.1
2
Time (s)
1
T
J
3
= 25 °C
Vishay Siliconix
10
www.vishay.com/doc?91000
T
I
J
D
Si8472DB
= 125 °C
4
100
= 1.5 A
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1000
5
5