SI8411DB-T1 VISHAY [Vishay Siliconix], SI8411DB-T1 Datasheet - Page 3

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SI8411DB-T1

Manufacturer Part Number
SI8411DB-T1
Description
P-Channel 20-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Document Number: 72444
S-32349—Rev. A, 17-Nov-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.20
0.16
0.12
0.08
0.04
0.00
30
10
5
4
3
2
1
0
1
0.0
0
0
V
GS
V
I
0.2
Source-Drain Diode Forward Voltage
D
DS
= 1 A
On-Resistance vs. Drain Current
= 2.5 V
= 10 V
5
3
V
0.4
SD
Q
g
I
− Source-to-Drain Voltage (V)
D
− Total Gate Charge (nC)
− Drain Current (A)
0.6
Gate Charge
10
6
T
J
= 150_C
0.8
15
9
1.0
T
J
V
= 25_C
GS
1.2
= 4.5 V
20
12
1.4
25
15
1.6
New Product
2000
1600
1200
0.20
0.16
0.12
0.08
0.04
0.00
800
400
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
−25
V
I
C
D
GS
rss
= 1 A
V
V
1
4
= 4.5 V
GS
DS
T
J
0
− Gate-to-Source Voltage (V)
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
25
Capacitance
C
2
8
oss
Vishay Siliconix
50
I
D
= 1 A
C
12
3
iss
75
Si8411DB
100
www.vishay.com
16
4
125
150
20
5
3

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