HCTS540DMSR INTERSIL [Intersil Corporation], HCTS540DMSR Datasheet
HCTS540DMSR
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HCTS540DMSR Summary of contents
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... CMOS/SOS Logic Family. The HCTS540MS is supplied lead Ceramic flatpack (K suffi SBDIP Package (D suffix). Ordering Information PART NUMBER TEMPERATURE RANGE HCTS540DMSR HCTS540KMSR HCTS540D/Sample HCTS540K/Sample HCTS540HMSR CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. ...
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Functional Diagram INPUTS ( OE1 1 OE2 19 OE1 H = High Level L = Low Level X = Don’t Care Z = High Impedance HCTS540MS ONE OF 8 BUFFERS TRUTH TABLE OE2 AN L ...
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Absolute Maximum Ratings Supply Voltage (VCC -0.5V to +7.0V Input Voltage Range, All Inputs . . ...
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TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Data to Output TPHL VCC = 4.5V TPLH VCC = 4.5V Enable to Output TPZL VCC = 4.5V TPZH VCC = 4.5V Disable to Output TPLZ, VCC = 4.5V TPHZ NOTES: 1. ...
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TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) PARAMETER SYMBOL Output Voltage High VOH VCC = 4.5V or 5.5V, VIH = VCC/2, VIL = 0.8V, IOH = -50 A Input Leakage Current IIN VCC = 5.5V, VIN = VCC ...
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CONFORMANCE GROUPS METHOD Group E Subgroup 2 5005 NOTE: 1. Except FN test which will be performed 100% Go/No-Go. TABLE 8. STATIC BURN-IN AND DYNAMIC BURN-IN TEST CONNECTIONS OPEN GROUND STATIC BURN-IN I TEST CONNECTIONS (Note ...
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Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...
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AC Timing Diagrams VIH INPUT VS VIL TPLH VOH VS OUTPUT VOL TTLH VOH 80% 20% OUTPUT VOL AC VOLTAGE LEVELS PARAMETER HCTS VCC 4.50 VIH 3.00 VS 1.30 VIL 0 GND 0 Three-State Low Timing Diagrams VIH INPUT VS ...
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Three-State High Timing Diagrams VIH INPUT VS VIL TPHZ VOH VW OUTPUT VOZ THREE-STATE HIGH VOLTAGE LEVELS PARAMETER HCTS VCC 4.50 VIH 3.00 VS 1.30 VT 1.30 VW 3.60 VIL 0 GND 0 All Intersil semiconductor products are manufactured, assembled ...
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Die Characteristics DIE DIMENSIONS: 101 x 85mils METALLIZATION: Type: SiAl Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND PAD SIZE: 100 m ...