HCTS30HMSR INTERSIL [Intersil Corporation], HCTS30HMSR Datasheet - Page 4

• Manufacturer Part Number: HCTS30HMSR
• Description: Radiation Hardened 8-Input NAND Gate
• Manufacturer: INTERSIL [Intersil Corporation]

NOTES:
NOTE:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500 , CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V.
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
Input to Output
Capacitance Power
Dissipation
Input Capacitance
Output Transition
Time
Quiescent Current
Output Current (Sink)
Output Current
(Source)
Output Voltage Low
Output Voltage High
Input Leakage Current
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
PARAMETER
PARAMETER
PARAMETER
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
SYMBOL
SYMBOL
TPHL
TPLH
TTHL
TTLH
CPD
CIN
SYMBOL
VOH
VOL
ICC
IOH
IOL
IIN
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
VCC = 4.5V
VCC = 4.5V
VCC = 5.0V, f = 1MHz
VCC = 5.0V, f = 1MHz
VCC = 4.5V
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
VCC = 4.5V and 5.5V,
VIH = VCC/2, VIL = 0.8V, IOL = 50 A
VCC = 4.5V and 5.5V,
VIH = VCC/2, VIL = 0.8V, IOH = -50 A
VCC = 5.5V, VIN = VCC or GND
CONDITIONS
CONDITIONS
(NOTES 1, 2)
Specifications HCTS30MS
CONDITIONS
(NOTES 1, 2)
443
GROUPS
GROUP
A SUB-
NOTES
10, 11
10, 11
9
9
1
1
1
1
1
1
TEMPERATURE
TEMPERATURE
+125
+125
+125
TEMPERATURE
+125
+125
+25
+25
+25
+25
+25
o
o
o
C, -55
C, -55
C, -55
+25
+25
+25
+25
+25
+25
o
o
o
o
o
o
o
C
C
C
C
C
C
C
o
o
o
o
o
o
o
o
o
C
C
C
C
C
C
C
C
C
VCC
MIN
MIN
MIN
-4.0
4.0
-0.1
2
2
2
2
Spec Number
-
-
-
-
-
-
200K RAD
-
-
-
LIMITS
LIMITS
LIMITS
MAX
MAX
MAX
105
225
0.2
0.1
22
23
22
25
10
10
15
22
-
-
-
5
UNITS
UNITS
UNITS
518639
mA
mA
mA
ns
ns
ns
ns
pF
pF
pF
pF
ns
ns
V
V
A