HCTS27HMSR INTERSIL [Intersil Corporation], HCTS27HMSR Datasheet

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HCTS27HMSR

Manufacturer Part Number
HCTS27HMSR
Description
Radiation Hardened Triple 3-Input NOR Gate
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
September 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
• Dose Rate Survivability: >1 x 10
• Dose Rate Upset >10
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
• Input Current Levels Ii
Description
The Intersil HCTS27MS is a Radiation Hardened Triple 3-Input
NOR Gate. A Low on all inputs forces the output to a High state.
The HCTS27MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS27MS is supplied in a 14 lead Ceramic flatpack (K
suffix) or a SBDIP Package (D suffix).
Ordering Information
HCTS27DMSR
HCTS27KMSR
HCTS27D/
Sample
HCTS27K/
Sample
HCTS27HMSR
(Typ)
- VIL = 0.8V Max
- VIH = VCC/2 Min
NUMBER
PART
TEMPERATURE
-55
-55
o
o
RANGE
C to +125
C to +125
+25
+25
+25
10
o
o
o
RAD (Si)/s 20ns Pulse
C
C
C
5 A at VOL, VOH
|
Copyright
o
o
C
C
12
Intersil Class
S Equivalent
Intersil Class
S Equivalent
Sample
Sample
Die
o
SCREENING
C to +125
©
RAD (Si)/s
LEVEL
Intersil Corporation 1999
o
-9
C
2
/mg
Errors/Bit-Day
14 Lead SBDIP
14 Lead
Ceramic
Flatpack
14 Lead SBDIP
14 Lead
Ceramic
Flatpack
Die
PACKAGE
430
Pinouts
Functional Diagram
NOTE: L = Logic Level Low, H = Logic level High
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE
HCTS27MS
GND
A1
B1
A2
B2
C2
Y2
14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL
An
H
H
H
H
L
L
L
L
PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14
An
Bn
Cn
(FLATPACK) MIL-STD-1835 CDFP3-F14
GND
INPUTS
A1
B1
A2
B2
C2
Y2
Bn
H
H
H
H
Triple 3-Input NOR Gate
L
L
L
L
1
2
3
4
5
6
7
TRUTH TABLE
1
2
3
4
5
6
7
TOP VIEW
TOP VIEW
Radiation Hardened
Cn
H
H
H
H
L
L
L
L
Spec Number
14
13
12
11
10
9
8
File Number
14
13
12
11
10
9
8
VCC
C1
Y1
C3
B3
A3
Y3
OUTPUTS
Yn
H
L
L
L
L
L
L
L
518643
3055.1
VCC
C1
Y1
C3
B3
A3
Y3
Yn

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HCTS27HMSR Summary of contents

Page 1

... HCTS27KMSR - +125 C o HCTS27D/ +25 C Sample o HCTS27K/ +25 C Sample o HCTS27HMSR +25 C CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. | http://www.intersil.com or 407-727-9207 Copyright HCTS27MS Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL 2 /mg -9 Errors/Bit-Day 12 RAD (Si)/ +125 ...

Page 2

Absolute Maximum Ratings Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage ...

Page 3

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Input to Output TPHL VCC = 4.5V Input to Output TPLH VCC = 4.5V NOTES: 1. All voltages referenced to device GND measurements assume RL = 500 , CL = ...

Page 4

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) PARAMETER SYMBOL Noise Immunity FN VCC = 4.5V, VIH = 2.25V, VIL = 0.8V, Functional Test (Note 3) Input to Output TPHL VCC = 4.5V TPLH VCC = 4.5V NOTES: 1. ...

Page 5

CONFORMANCE GROUPS METHOD Group E Subgroup 2 5005 NOTE: 1. Except FN test which will be performed 100% Go/No-Go. TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OPEN GROUND STATIC BURN-IN I TEST CONDITIONS (Note ...

Page 6

Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...

Page 7

AC Timing Diagrams VIH INPUT VS VIL TPLH VOH VS OUTPUT VOL TTLH VOH 80% 20% OUTPUT VOL AC VOLTAGE LEVELS PARAMETER HCTS VCC 4.50 VIH 3.00 VS 1.30 VIL 0 GND 0 HCTS27MS AC Load Circuit DUT TPHL CL ...

Page 8

Die Characteristics DIE DIMENSIONS mils 2.20 x 2.24mm METALLIZATION: Type: SiAl Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND ...

Page 9

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, ...

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