HCTS139HMSR INTERSIL [Intersil Corporation], HCTS139HMSR Datasheet

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HCTS139HMSR

Manufacturer Part Number
HCTS139HMSR
Description
Radiation Hardened Dual 2-to-4 Line Decoder/Demultiplexer
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
September 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
• Dose Rate Survivability: >1 x 10
• Dose Rate Upset >10
• Latch-Up Free Under Any Conditions
• Fanout (Over Temperature Range)
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
• Input Current Levels Ii
Description
The Intersil HCTS139MS is a Radiation Hardened 2-to-4 line
Decoder/Demultiplexer with an active low enable (E). Data
on the select inputs (A0, A1) cause one of the four normally
high outputs to go to a low logic level. The Demultiplexing
function is performed by using the enable input as the data
input.
The HCTS139MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family
with TTL input compatibility.
The HCTS139MS is supplied in a 16 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
HCTS139DMSR
HCTS139KMSR
HCTS139D/Sample
HCTS139K/Sample
HCTS139HMSR
Bit-Day (Typ)
- Bus Driver Outputs - 15 LSTTL Loads
- VIL = 0.8V Max
- VIH = VCC/2 Min
PART NUMBER
10
RAD (Si)/s 20ns Pulse
5 A at VOL, VOH
TEMPERATURE RANGE
12
o
C to +125
-55
-55
RAD (Si)/s
o
o
C to +125
C to +125
+25
+25
+25
o
o
o
o
C
C
C
C
2
/mg
-9
o
o
C
C
Errors/
520
Pinouts
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
HCTS139MS
GND
A0 1
A1 1
Y0 1
Y1 1
Y2 1
Y3 1
SCREENING LEVEL
E1
2-to-4 Line Decoder/Demultiplexer
FLATPACK PACKAGE (FLATPACK)
16 LEAD CERAMIC DUAL-IN-LINE
16 LEAD CERAMIC METAL SEAL
METAL SEAL PACKAGE (SBDIP)
GND
A0 1
A1 1
E1 1
Y0 1
Y1 1
Y2 2
Y3 1
MIL-STD-1835 CDFP4-F16
MIL-STD-1835 CDIP2-T16
Radiation Hardened Dual
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
TOP VIEW
TOP VIEW
16 Lead SBDIP
16 Lead Ceramic Flatpack
16 Lead SBDIP
16 Lead Ceramic Flatpack
Die
16
15
14
13
12
11
10
9
16
15
14
13
12
11
10
Spec Number
9
File Number
PACKAGE
VCC
2 E
2 A0
2 A1
2 Y0
2 Y1
2 Y2
2 Y3
VCC
2 E
2 A0
2 A1
2 Y0
2 Y1
2 Y2
2 Y3
518606
2231.2

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HCTS139HMSR Summary of contents

Page 1

... SBDIP Package (D suffix). Ordering Information PART NUMBER TEMPERATURE RANGE HCTS139DMSR HCTS139KMSR HCTS139D/Sample HCTS139K/Sample HCTS139HMSR CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 HCTS139MS 2-to-4 Line Decoder/Demultiplexer Pinouts 2 /mg ...

Page 2

Functional Diagram 2(14) A0 3(13) A1 1(15) E INPUTS ENABLE SELECT Logic 1 = High Logic 0 = Low X = Immaterial HCTS139MS TRUTH TABLE ...

Page 3

Absolute Maximum Ratings Supply Voltage (VCC -0.5V to +7.0V Input Voltage Range, All Inputs . . ...

Page 4

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL A0 Output TPHL, VCC = 4.5V TPLH Enable to Output TPHL, VCC = 4.5V TPLH NOTES: 1. All voltages referenced to device GND measurements assume RL = 500 ...

Page 5

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) PARAMETER SYMBOL Noise Immunity FN VCC = 4.5V, VIH = 2.25V, Functional Test VIL = 0.8V, (Note 3) A0 Output TPHL, VCC = 4.5V TPLH Enable to Output TPHL, ...

Page 6

CONFORMANCE GROUPS METHOD Group E Subgroup 2 5005 NOTE: 1. Except FN test which will be performed 100% go/no-go. TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OPEN GROUND STATIC I BURN-IN TEST CONNECTIONS (Note1 ...

Page 7

Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...

Page 8

AC Timing Diagrams VIH INPUT VS VIL TPLH VOH VS OUTPUT VOL TTLH VOH 80% 20% OUTPUT VOL AC VOLTAGE LEVELS PARAMETER HCTS VCC 4.50 VIH 3.00 VS 1.30 VIL 0 GND 0 All Intersil semiconductor products are manufactured, assembled ...

Page 9

Die Characteristics DIE DIMENSIONS: 2.74mm x 2.68mm 108 mils x 106 mils METALLIZATION: Type: SiAl Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm ...

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