HCTS04HMSR INTERSIL [Intersil Corporation], HCTS04HMSR Datasheet

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HCTS04HMSR

Manufacturer Part Number
HCTS04HMSR
Description
Radiation Hardened Hex Inverter
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
August 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
• Dose Rate Survivability: >1 x 10
• Dose Rate Upset >10
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• LSTTL Input Compatibility
• Input Current Levels Ii
Description
The Intersil HCTS04MS is a Radiation Hardened Hex Inverter. A
logic level on any input forces the output to the opposite logic
state.
The HCTS04MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCTS04MS is supplied in a 14 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
HCTS04DMSR
HCTS04KMSR
HCTS04D/
Sample
HCTS04K/
Sample
HCTS04HMSR
(Typ)
- VIL = 0.8V Max
- VIH = VCC/2
NUMBER
PART
TEMPERATURE
-55
-55
o
o
RANGE
C to +125
C to +125
+25
+25
+25
10
o
o
o
C
C
C
RAD (Si)/s 20ns Pulse
5 A at VOL, VOH
|
o
o
Copyright
C
C
Intersil Class
S Equivalent
Intersil Class
S Equivalent
Sample
Sample
Die
SCREENING
12
o
C to +125
LEVEL
©
RAD (Si)/s
Intersil Corporation 1999
o
-9
C
2
14 Lead SBDIP
14 Lead Ceramic
Flatpack
14 Lead SBDIP
14 Lead Ceramic
Flatpack
Die
/mg
Errors/Bit-Day
PACKAGE
380
Pinouts
Functional Diagram
(1, 3, 5, 9, 11, 13)
HCTS04MS
GND
A1
A2
A3
Y1
Y2
Y3
NOTE: L = Logic Level Low,
FLATPACK PACKAGE (FLATPACK)
14 LEAD CERAMIC DUAL-IN-LINE
14 LEAD CERAMIC METAL SEAL
METAL SEAL PACKAGE (SBDIP)
An
GND
INPUTS
MIL-STD-1835 CDFP3-F14
H = Logic level High
A1
Y1
A2
Y2
A3
Y3
MIL-STD-1835 CDIP2-T14
An
H
L
1
2
3
4
5
6
7
TRUTH TABLE
1
2
3
4
5
6
7
TOP VIEW
TOP VIEW
Radiation Hardened
Spec Number
14
13
12
11
10
9
8
OUTPUTS
File Number
14
13
12
11
10
9
8
Yn
Hex Inverter
H
VCC
A6
Y6
A5
Y5
A4
Y4
L
Yn
(2, 4, 6, 8, 10, 12)
518776
2140.2
VCC
A6
Y6
A5
Y5
A4
Y4

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HCTS04HMSR Summary of contents

Page 1

... HCTS04KMSR - +125 C Intersil Class S Equivalent o HCTS04D/ +25 C Sample Sample o HCTS04K/ +25 C Sample Sample o HCTS04HMSR +25 C Die CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. | http://www.intersil.com or 407-727-9207 Copyright HCTS04MS Pinouts 2 /mg -9 Errors/Bit-Day 12 RAD (Si)/ +125 C A1 ...

Page 2

Absolute Maximum Ratings Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage ...

Page 3

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Input to Yn TPHL VCC = 4.5V VCC = 4.5V Input to Yn TPLH VCC = 4.5V VCC = 4.5V NOTES: 1. All voltages referenced to device GND measurements assume ...

Page 4

TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) PARAMETER SYMBOL Noise Immunity FN VCC = 4.5V, VIH = 2.25V, Functional Test VIL = 0.8V, (Note 3) Input to Yn TPHL VCC = 4.5V TPLH VCC = 4.5V NOTES: 1. ...

Page 5

CONFORMANCE GROUPS METHOD Group E Subgroup 2 5005 NOTE: 1. Except FN test which will be performed 100% Go/No-Go. TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OPEN GROUND STATIC BURN-IN I TEST CONDITIONS (Note ...

Page 6

Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...

Page 7

AC Timing Diagrams VIH INPUT VS VIL TPLH VOH VS OUTPUT VOL TTLH VOH 80% 20% OUTPUT VOL AC VOLTAGE LEVELS PARAMETER HCTS VCC 4.50 VIH 3.00 VS 1.30 VIL 0 GND 0 HCTS04MS AC Load Circuit DUT TPHL CL ...

Page 8

Die Characteristics DIE DIMENSIONS mils 2.20mm x 2.24mm METALLIZATION: Type: AlSi Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND ...

Page 9

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, ...

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