KMM5364003CK SAMSUNG [Samsung semiconductor], KMM5364003CK Datasheet - Page 7
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KMM5364003CK
Manufacturer Part Number
KMM5364003CK
Description
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.KMM5364003CK.pdf
(17 pages)
DRAM MODULE
AC CHARACTERISTICS
Test condition : V
NOTES
Access time from CAS precharge
Fast page mode cycle time
CAS precharge time(Fast page cycle)
RAS pulse width(Fast page cycle)
W to RAS precharge time(C-B-R refresh)
W to RAS hold time(C-B-R refresh)
Hold time CAS low to CAS high
1.
2.
3.
4.
5.
6.
An initial pause of 200us is required after power-up followed
by any 8 RAS-only or CAS-before-RAS refresh cycles before
proper device operation is achieved.
V
timing of input signals. Transition times are measured
between V
for all inputs.
Measured with a load equivalent to 2 TTL loads and 100pF.
Operation within the
can be met.
If
access time is controlled exclusively by
Assumes that
This parameter defines the time at which the output achieves
the open circuit condition and is not referenced to V
V
IH
OL
t
(min) and V
RCD
.
is greater than the specified
ih
IH
/V
Parameter
(min) and V
t
RCD
il
t
=2.4/0.8V, V
RCD
IL
(max) is specified as a reference point only.
(max) are reference levels for measuring
t
RCD
t
RCD
IL
(max).
(max) and are assumed to be 5ns
(max) limit insures that
oh
(0 C T
/V
ol
=2.4/0.4V, Output loading CL=100pF
A
70 C, V
t
t
RCD
CAC
t
t
t
t
t
t
t
Symbol
(max) limit, then
CPA
PC
CP
RASP
WRP
WRH
CLCH
.
CC
=5.0V 10%. See notes 1,2.)
t
RAC
(max)
OH
Min
or
35
10
50
10
10
5
10.
11.
7.
9.
8.
-5
t
the data sheet as electrical characteristic s only. If
t
data out pin will remain high impedance for the duration of
the cycle.
Either
These parameter are referenced to the CAS leading edge in
early write cycles.
Operation within the
can be met.
t
access time is controlled by
In order to hold the address latched by the first CAS going
low, the parameter
WCS
WCS
RAD
200K
Max
30
is non-restrictive operating parameter. It is included in
is greater than the specified
t
t
WCS
RCH
(min), the cycle is an early write cycle and the
or
t
RAD
t
RRH
(max) is specified as reference point only. If
Min
40
10
60
10
10
5
t
must be satisfied for a read cycle.
KMM5364003CK/CKG
KMM5364103CK/CKG
CLCH
t
RAD
-6
must be met.
(max) limit insures that
t
AA
200K
Max
.
35
t
RAD
Unit
(max) limit, then
ns
ns
ns
ns
ns
ns
ns
t
RAC
Note
11
3
(max)