KMM5328004BSW SAMSUNG [Samsung semiconductor], KMM5328004BSW Datasheet - Page 2
![no-image](/images/no-image-200.jpg)
KMM5328004BSW
Manufacturer Part Number
KMM5328004BSW
Description
8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.KMM5328004BSW.pdf
(19 pages)
- Current page: 2 of 19
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RAS0/RAS2
DRAM MODULE
FUNCTIONAL BLOCK DIAGRAM
A0-A11
CAS2
CAS3
CAS0
CAS1
W
47
47
47
47
RAS
LCAS
UCAS
OE
RAS
LCAS
UCAS
OE
W A0-A11
W A0-A11
Vcc
Vss
U0
U2
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
0.1 or 0.22uF Capacitor
for each DRAM
DQ18 - DQ25
DQ27 - DQ34
DQ9 - DQ16
DQ0 - DQ7
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
KMM5328004BSW/BSWG
W A0-A11
W A0-A11
U3
U5
To all DRAMs
UCAS
UCAS
LCAS
LCAS
RAS
RAS
OE
OE
RAS1/RAS3
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