KMM5322104CKU SAMSUNG [Samsung semiconductor], KMM5322104CKU Datasheet - Page 3

• Manufacturer Part Number: KMM5322104CKU
• Description: 2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V
• Manufacturer: SAMSUNG [Samsung semiconductor]

DRAM MODULE
ABSOLUTE MAXIMUM RATINGS *
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
RECOMMENDED OPERATING CONDITIONS
*1 : V
*2 : -2.0V/20ns, Pulse width is measured at V
* NOTE :
Voltage on any pin relative to V
Voltage on V
Storage Temperature
Power Dissipation
Short Circuit Output Current
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
CC
+2.0V/20ns, Pulse width is measured at V
I
I
address can be changed maximum once within one EDO mode cycle,
CC1
CC
is specified as an average current. In I
, I
CC
CC3
supply relative to V
, I
CC4
Item
and I
Item
CC6
SS
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
SS
SS
.
CC
.
CC1
and I
Symbol
V
V
V
V
CC
SS
IH
IL
(Voltage referenced to V
CC3
V
Symbol
IN
, address can be changed maximum once while RAS=V
V
T
, V
I
P
OS
CC
stg
d
OUT
Min
t
HPC
.
KMM5322104CKU/CKUG
-55 to +150
SS
-1 to +7.0
-1 to +7.0
Rating
Typ
, T
50
4
A
= 0 to 70 C)
Max
Unit
mA
W
V
V
C
IL
Unit
. In I
CC4
,