KMM374S403CT SAMSUNG [Samsung semiconductor], KMM374S403CT Datasheet - Page 5

• Manufacturer Part Number: KMM374S403CT
• Description: PC100 SDRAM MODULE
• Manufacturer: SAMSUNG [Samsung semiconductor]

KMM374S403CT
Note :
ABSOLUTE MAXIMUM RATINGS
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
CAPACITANCE
Note :
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Supply voltage
Input logic high votlage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current(Inputs)
Input leakage current (I/O pins)
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V
4. Dout is disabled, 0V
Address (A0 ~ A10/AP, BA0)
Input leakage currents include HI-Z output leakage for all bi-directional buffers with Tri-State outputs.
Parameter
IH
IL
DQM (DQM0 ~ DQM7)
(min) = -2.0V AC. The undershoot voltage duration is
(max) = 5.6V AC. The overshoot voltage duration is
DD
Clock (CLK0, CLK2)
DQ (DQ0 ~ DQ63)
Parameter
CB (CB0 ~ CB7)
RAS, CAS, WE
CS (CS0, CS2)
supply relative to Vss
CKE (CKE0)
Pin
(V
V
DD
IN
= 3.3V, T
V
V
DDQ
OUT
.
A
V
= 23 C, f = 1MHz, V
V
DDQ.
Symbol
DD
V
V
V
V
, V
I
I
OH
OL
IL
IL
IH
IL
DDQ
V
Symbol
V
Symbol
C
C
DD
C
C
IN
C
C
C
T
C
OUT1
OUT2
DQM
ADD
CKE
CLK
, V
I
P
, V
STG
CS
OS
IN
Min
-0.3
-18
3.0
2.0
2.4
D
-3
REF
-
OUT
DDQ
SS
= 0V, T
=1.4V
3ns.
3ns.
A
200 mV)
= 0 to 70 C)
Typ
3.3
3.0
0
-
-
-
-
Min
65
65
40
30
30
15
10
10
V
-55 ~ +150
PC100 SDRAM MODULE
DDQ
-1.0 ~ 4.6
-1.0 ~ 4.6
Max
3.6
0.8
0.4
18
Value
3
-
+0.3
18
50
Max
95
95
60
40
40
25
20
20
Unit
uA
uA
V
V
V
V
V
REV. 1 Mar. '98
I
OH
I
OL
Unit
mA
W
Unit
V
V
Note
C
pF
pF
pF
pF
pF
pF
pF
pF
= -2mA
= 2mA
3,4
1
2
3