KMM372V413CK SAMSUNG [Samsung semiconductor], KMM372V413CK Datasheet - Page 5

• Manufacturer Part Number: KMM372V413CK
• Description: 4M x 72 DRAM DIMM with ECC using 2Mx8, Dual Bank 2K Refresh, 3.3V
• Manufacturer: SAMSUNG [Samsung semiconductor]

DRAM MODULE
AC CHARACTERISTICS
Test condition : V
RAS to W delay time
CAS setup time(CAS-before-RAS refresh)
CAS hold time(CAS-before-RAS refresh)
RAS precharge to CAS hold time
Access time from CAS precharge
Fast page mode cycle time
Fast page mode read-modify-write cycle time
CAS precharge time(Fast page cycle)
RAS pulse width (Fast page cycle)
RAS hold time from CAS precharge
W to RAS precharge time (C-B-R refresh)
W to RAS hold time (C-B-R refresh)
CAS precharge(C-B-R counter test)
OE access time
OE to data delay
Output buffer turn off delay time from OE
OE command hold time
PDE to Valid PD bit
PDE to PD bit Inactive
Present Detect Read Cycle
ih
Parameter
/V
il
=2.0/0.8V, V
oh
(0 C T
/V
ol
=2.0/0.8V, Output loading CL=100pF
A
70 C, V
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RWD
CSR
CHR
RPC
CPA
PC
PRWC
CP
RASP
RHCP
WRP
WRH
CPT
OEA
OED
OEZ
OEH
PD
PDOFF
Symbol
CC
=3.3V 0.3V. See notes 1,2.)
Min
71
10
35
75
10
50
35
15
20
18
13
8
3
8
5
2
-5
200K
Max
35
18
18
10
7
Min
83
10
40
80
10
60
40
15
20
20
15
8
3
8
5
2
KMM372V413CK/CS
-6
200K
Max
40
20
20
10
7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
7,11
3,11
11
11
11
11
11
11
11
11
11