KMM372V404BS SAMSUNG [Samsung semiconductor], KMM372V404BS Datasheet - Page 5

• Manufacturer Part Number: KMM372V404BS
• Description: 4M x 72 DRAM DIMM with ECC using 4Mx16, 4Mx4 4K Refresh, 3.3V
• Manufacturer: SAMSUNG [Samsung semiconductor]

DRAM MODULE
AC CHARACTERISTICS
RAS ro W delay time
CAS setup time(CAS-before-RAS refresh)
CAS hold time(CAS-before-RAS refresh)
RAS to CAS precharge time
Access time from CAS precharge
Fast page mode cycle time
Fast page mode read-modify-write cycle time
CAS precharge time(Fast page cycle)
RAS pulse width(Fast page cycle)
RAS hold time from CAS precharge
W to RAS precharge time(C-B-R refresh)
W to RAS hold time(C-B-R refresh)
OE access time
OE to data delay
Output buffer turn off delay time from OE
OE command hold time
PDE to Valid PD bit
PDE to PD bit Inactive
Present Detect Read Cycle
Parameter
(0 C T
A
70 C, V
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
Symbol
RWD
CSR
CHR
RPC
CPA
PC
PRWC
CP
RASP
RHCP
WRP
WRH
OEA
OED
OEZ
OEH
PD
PDOFF
CC
=3.3V 0.3V. See notes 1,2.)
Min
71
10
35
76
10
50
35
15
18
13
8
3
8
5
2
-5
200K
Max
35
18
18
10
7
Min
83
10
40
85
10
60
40
15
20
15
8
3
8
5
2
-6
KMM372V404BS
200K
Max
40
20
20
10
7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
11,16
Note
7,11
3,11
11
11
13
11
11
11
11
11
11